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EMP38K03HPC |
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| Part Number | EMP38K03HPC |
| Manufacturer | Excelliance MOS |
| Description | Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.0mΩ 4.0mΩ 9.4mΩ 5.4mΩ ID @TC=25℃ 41A 60A ID @TA=25℃ 16A 21A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage Contin. |
| Features | sting in condition of VD=15V, L=0.1mH, VG=10V, IL=21A, Rated VDS=30V N-CH_Q1 ▪100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=32A, Rated VDS=30V N-CH_Q2 ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Q1 Q2 Junction-to-Case RθJC Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 365°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test 6 5 40 40 65 65 UNIT V A mJ W W °C UNIT °C/W 2021/4/23 P.1 A.1 EMP38K03HPC ▪Q1_ELECTRICAL CHARACTERI. |
| Datasheet |
 EMP38K03HPC Data Sheet
PDF 698.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMP310 |
Excelics Semiconductor |
21.0 - 24.0 GHz Power Amplifier MMIC |
|
| 2 | EMP311 |
Excelics Semiconductor |
21.0 - 24.0 GHz Power Amplifier MMIC |
|
| 3 | EMP312 |
Excelics Semiconductor |
21.0 - 24.0 GHz Power Amplifier MMIC |
|
| 4 | EMP37N03H |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMP-8603 |
EnGenius |
Mini-PCI Adapter |
|
| 6 | EMP11 |
Rohm |
Switching diode |
|
| 7 | EMP16N04HS |
Excelliance MOS |
MOSFET |
|
| 8 | EMP18K03HPCS |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 9 | EMP19K03HPC |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 10 | EMP19K03HPCS |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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