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EMB44P04A |
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| Part Number | EMB44P04A |
| Manufacturer | Excelliance MOS |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -40V RDSON (MAX.) 44mΩ ID -25A P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Dra. |
| Features | PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -4.5V VGS = -10V, ID = -10A VGS = -4.5V, ID = -6A VDS = -5V, ID = -10A DYNAMIC -40 V -1 -2 -3 ±100 nA -1 A -25 -25 A 38 44 mΩ 60 75 11 S Input. |
| Datasheet |
 EMB44P04A Data Sheet
PDF 837.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB44P04Q |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| 2 | EMB4 |
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| 3 | EMB4 |
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| 4 | EMB4 |
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| 5 | EMB40A03K |
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| 6 | EMB40A06S |
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| 7 | EMB40P06A |
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| 8 | EMB45A06G |
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| 9 | EMB45N06A |
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| 10 | EMB45N06G |
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Desde 2024. D4U Semiconductor.
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