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| Part Number | D44C12 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | D44C12 |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon Power Transistor |
| Description | D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor The D45C12 and D44C12 areĂfor general purpose driver or medium power output stages in CW or switching applications. Features •ăLow Collector-Emitter Saturation Voltage - 0.5 V (Max) •ăHigh ft for Good Frequency Response •ăLow Leaka. |
| Features |
•ăLow Collector-Emitter Saturation Voltage - 0.5 V (Max) •ăHigh ft for Good Frequency Response •ăLow Leakage Current •ăPb-Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage VCEO 80 Vdc VCES 90 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage ÎÎÎÎÎÎÎÎÎ. |
| Part Number | D44C12 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C12 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of ampli. |
| Features | stance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 50mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A ;IB= 100mA . |
| Part Number | D44C12 |
| Manufacturer | Central Semiconductor |
| Title | SILICON NPN POWER TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous C. |
| Features | EO IC=100mA (D44C10, 11, 12) 80 VCE(SAT) IC=1.0A, IB=50mA (D44C2, 3, 5, 6, 8, 9, 11, 12) VCE(SAT) VBE(SAT) Cob fT td+tr ts tf IC=1.0A, IB=100mA (D44C1, 4, 7, 10) IC=1.0A, IB=100mA VCB=10V, IE=0, f=1.0MHz VCE=4.0V, IC=20mA IC=1.0A, IB1=100mA IC=1.0A, IB1=IB2=100mA IC=1.0A, IB1=IB2=100mA 50 100 500 75 MAX 10 100 0.5 0.5 1.3 100 UNITS μA μA V V V V V V V pF MHz ns ns ns R1 (4-March 2014) D. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D44C1 |
Central Semiconductor |
SILICON NPN POWER TRANSISTORS |
|
| 2 | D44C1 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | D44C1 |
Savantic |
Silicon NPN Power Transistors |
|
| 4 | D44C10 |
Central Semiconductor |
SILICON NPN POWER TRANSISTORS |
|
| 5 | D44C10 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | D44C10 |
Savantic |
Silicon NPN Power Transistors |
|
| 7 | D44C11 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | D44C11 |
Central Semiconductor |
SILICON NPN POWER TRANSISTORS |
|
| 9 | D44C11 |
NTE |
Silicon NPN Transistor |
|
| 10 | D44C11 |
Savantic |
Silicon NPN Power Transistors |
|
Desde 2024. D4U Semiconductor.
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