| Part Number | CS601 |
| Manufacturer | IXYS |
| Title | (CS6xx) Thyristors |
| Description | www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet4U.com et4U.com DataSheet4U.c... |
| Features |
... |
| Datasheet | CS601 pdf datasheet - 478.83KB |
| Part Number | CS60N06C4 |
| Manufacturer | Huajing Microelectronics |
| Title | Silicon N-Channel Power MOSFET |
| Description | CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, impr. |
| Features |
l Fast Switching l Low ON Resistance（Rdson≤10mΩ） l Low Gate Charge (Typical Data: 57nC) l Low Reverse transfer capacitances(Typical: 180pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Par. |
| Datasheet | CS60N06C4 pdf datasheet |
| Part Number | CS60N06AQ3 |
| Manufacturer | Huajing Microelectronics |
| Title | Silicon N-Channel Power MOSFET |
| Description | CS60N06 AQ3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, imp. |
| Features |
l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data:57nC) l Low Reverse transfer capacitances(Typical:180pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Para. |
| Datasheet | CS60N06AQ3 pdf datasheet |
| Part Number | CS60N06A |
| Manufacturer | CASS |
| Title | N-Channel Trench Power MOSFET |
| Description | The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON. |
| Features |
● VDS=60V；ID=68A@ VGS=10V； RDS(ON)<8.4mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS60N06A To-220 Top View Schematic Diagram VDS = 60 V ID = 68A RDS(ON) = 7mΩ Package Marking and Order. |
| Datasheet | CS60N06A pdf datasheet |
| Part Number | CS60N06 |
| Manufacturer | CASS |
| Title | N-Channel Trench Power MOSFET |
| Description | The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON). |
| Features |
● VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS60N06 To-220 Top View Schematic Diagram VDS = 60 V ID = 80 A RDS(ON) = 6.2 mΩ Package Marking and Or. |
| Datasheet | CS60N06 pdf datasheet |
| Part Number | CS60N04A4 |
| Manufacturer | Huajing Microelectronics |
| Title | Silicon N-Channel Power MOSFET |
| Description | CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching. |
| Features |
l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150°
VDSS
40 V
ID 60 A
PD(TC=25℃)
52
W
RDS(ON)Typ
8.5 mΩ
Applications：
Power switch circuit of adaptor and c. |
| Datasheet | CS60N04A4 pdf datasheet |
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