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| Distributor | Stock | Price | Buy |
|---|
C2312 |
| Part Number | C2312 |
| Manufacturer | HGSemi |
| Title | Silicon NPN POWER TRANSISTOR |
| Description | Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMEN. |
| Features |
• • • • HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 –T – SEATING PLANE 4 DESCRIPTION Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLEC. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C231 |
Motorola |
(C230 - C233) Silicon Controlled Rectifier |
|
| 2 | C2310 |
Renesas |
2SC2310 |
|
| 3 | C2310 |
Vectron International |
TCXO |
|
| 4 | C2310 |
Inchange Semiconductor Company |
2SC2310 |
|
| 5 | C2314 |
Sanyo Semiconductor Corporation |
2SC2314 |
|
| 6 | C2315 |
Sanken electric |
NPN Transistor 2SC2315 |
|
| 7 | C2316 |
Sanken electric |
NPN Transistor 2SC2316 |
|
| 8 | C231A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 9 | C231A3 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 10 | C231B |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
Desde 2024. D4U Semiconductor.
|