Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
C2120 |
| Part Number | C2120 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN Transistor |
| Description | 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitt. |
| Features | IC = 500 mA, IB = 20 mA VBE VCE = 1 V, IC = 10 mA fT VCE = 5 V, IC = 10 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit 0.1 µA 0.1 µA 30 V 100 320 35 0.5 V 0.5 0.8 V 120 MHz 13 pF 1 2005-08-02 2222SC2120 2 2005-08-02 3332SC212. |
C2120 |
| Part Number | C2120 |
| Manufacturer | JIANGSU CHANGJIANG |
| Title | NPN Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) FEATURES z High DC Current Gain z Complementary to 2SA950 TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj . |
| Features |
z High DC Current Gain z Complementary to 2SA950
TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value . |
C2120 |
| Part Number | C2120 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Transistor |
| Description | ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 APPLICATIONS ·Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base . |
| Features | B= 35V; IE= 0 IEBO Collector Cutoff Current VEB= 5V; IC= 0 hFE(1) DC Current Gain IC= 0.1A ; VCE= 1V hFE(2) DC Current Gain IC= 0.7A ; VCE= 1V fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 5V; f= 100MHz Cob Collector Output Capacitance VCB=10V; IE=0; f=1MHz MIN TYP. MAX UNIT 30 V 0.5 V 0.5 0.8 V 0.1 μA 0.1 μA 100 320 35 120 MHz 13 pF hFE(1) Classifications OY 100-200 160-320 i. |
C2120 |
| Part Number | C2120 |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | Elektronische Bauelemente 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current Gain Complementary to 2SA950 CLASSIFICATION OF hFE Product-Rank 2SC2120-O Range 100~200 2SC2120-Y 160~320 TO-92 G. |
| Features | High DC Current Gain Complementary to 2SA950 CLASSIFICATION OF hFE Product-Rank 2SC2120-O Range 100~200 2SC2120-Y 160~320 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 Collector 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise. |
C2120 |
| Part Number | C2120 |
| Manufacturer | Dc Components |
| Title | NPN Transistor |
| Description | Designed for audio frequency amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature. |
| Features | e BVCEO 30 Emitter-Base Breakdown Volatge BVEBO 5 Collector Cutoff Current ICBO - Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) IEBO VCE(sat) VBE(sat) - DC Current Gain(1) hFE1 hFE2 45 100 hFE3 40 Transition Frequency fT - Output Capacitance Cob - (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Typ - 0.28 0.98 120 13 Max 0.. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C2120Y |
ETC |
CSC2120Y |
|
| 2 | C2104 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | C2130 |
JIANGSU CHANGJIANG |
NPN Transistor |
|
| 4 | C2131 |
Mitsubishi |
2SC2131 |
|
| 5 | C216 |
Intel |
Platform Controller |
|
| 6 | C2161 |
Cambridge Semiconductor |
flyback controllers |
|
| 7 | C2161PX2 |
Cambridge Semiconductor |
Primary Sensing SMPS Controller |
|
| 8 | C2162 |
Cambridge Semiconductor |
flyback controllers |
|
| 9 | C2162PX2 |
Cambridge Semiconductor |
Primary Sensing SMPS Controller |
|
| 10 | C2163PX2 |
Cambridge Semiconductor |
Primary Sensing SMPS Controller |
|
Desde 2024. D4U Semiconductor.
|