Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BYV29-300 |
| Part Number | BYV29-300 |
| Manufacturer | Vishay |
| Title | Ultrafast Rectifier |
| Description | UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400 Vishay General Semiconductor Ultrafast Rectifier TO-220AC ITO-220AC 2 BYV29, UG8 Series PIN 1 PIN 2 2 1 BYV29F, UGF8 Series PIN 1 1 CASE PIN 2 TO-263AB K FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switchin. |
| Features |
• Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BYV29-300M |
Seme LAB |
HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER |
|
| 2 | BYV29-300SMD |
Seme LAB |
HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER |
|
| 3 | BYV29-400 |
NXP |
Rectifier diodes ultrafast |
|
| 4 | BYV29-400 |
Vishay |
Ultrafast Rectifier |
|
| 5 | BYV29-400 |
WeEn |
Ultrafast power diode |
|
| 6 | BYV29-400M |
Seme LAB |
HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER |
|
| 7 | BYV29-400SMD |
Seme LAB |
HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER |
|
| 8 | BYV29-500 |
NXP |
Rectifier diode |
|
| 9 | BYV29-500 |
INCHANGE |
Ultrafast Rectifier |
|
| 10 | BYV29-500M |
Seme LAB |
HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER |
|
Desde 2024. D4U Semiconductor.
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