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| Part Number | BYT13-800 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BYT13-800 |
| Manufacturer | TAYCHIPST |
| Title | FAST RECOVERY RECTIFIER DIODES |
| Description | FAST RECOVERY RECTIFIER DIODES BYT13-600 THRU BYT13-1000 600V-1000V 3.0A FEATURES D High efficiency D Low power losses D Very low switching losses D Low reverse current D High surge capability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Pa. |
| Features | D High efficiency D Low power losses D Very low switching losses D Low reverse current D High surge capability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter IFRM IF (AV) IFSM Repetive Peak Forward Current Average Forward Current * Surge non Repetitive Forward Current tp ≤ 20µs Ta = 55°C δ = 0.5 tp = 10ms Sinusoidal Ptot Power Dis. |
| Part Number | BYT13-800 |
| Manufacturer | Digitron Semiconductors |
| Title | FAST RECOVERY RECTIFIER DIODES |
| Description | BYT13-600 – BYT13-1000 High-reliability discrete products and engineering services since 1977 FAST RECOVERY RECTIFIER DIODES FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), stand. |
| Features |
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Symbol Parameter IFRM Repetitive peak forward current tp ≤ 20µS IF(AV) Average forward current * TA = 55°C = 0.5 IFSM Surge non-repetitive forward current tp = 10ms sin. |
| Part Number | BYT13-800 |
| Manufacturer | STMicroelectronics |
| Title | FAST RECOVERY RECTIFIER DIODES |
| Description | ® BYT 13-600 →1000 FAST RECOVERY RECTIFIER DIODES SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE APPLICATIONS ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward C. |
| Features | 25°C Test Conditions VR = VRRM IF = 3A Min. Typ. Max. 20 1.3 Unit µA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 150 Unit ns To evaluate the conduction losses use the following equations: VF = 0.95 + 0.050 IF P = 0.95 x IF(AV) + 0.050 IF2(RMS) F i gu re 1. Max i mum ave ra ge p ower dissipation versus average forward current. Fig. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BYT13-1000 |
TAYCHIPST |
FAST RECOVERY RECTIFIER DIODES |
|
| 2 | BYT13-1000 |
Sunmate |
HIGH EFFICIENCY RECTIFIER DIODES |
|
| 3 | BYT13-1000 |
Digitron Semiconductors |
FAST RECOVERY RECTIFIER DIODES |
|
| 4 | BYT13-1000 |
STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES |
|
| 5 | BYT13-1000 |
DSI |
DIODE |
|
| 6 | BYT13-600 |
Sunmate |
HIGH EFFICIENCY RECTIFIER DIODES |
|
| 7 | BYT13-600 |
TAYCHIPST |
FAST RECOVERY RECTIFIER DIODES |
|
| 8 | BYT13-600 |
Digitron Semiconductors |
FAST RECOVERY RECTIFIER DIODES |
|
| 9 | BYT13-600 |
STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES |
|
| 10 | BYT1300 |
Vishay Telefunken |
Fast Recovery Silicon Power Rectifier |
|
Desde 2024. D4U Semiconductor.
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