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| Part Number | BUZ45A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUZ45A |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | BUZ45A Semiconductor Data Sheet October 1998 File Number 2258.1 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET Features • 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.800Ω (BUZ45 field effect transistor designed for applications such as • SOA is Powe. |
| Features |
• 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.800Ω (BUZ45 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low . |
| Part Number | BUZ45A |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching reg. |
| Features |
·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and lo. |
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