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| Part Number | BUZ42 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUZ42 |
| Manufacturer | STMicroelectronics |
| Title | N-Channel MOSFET |
| Description | BUZ42 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss ROS(on) 10 BUZ42 500 V 20 4A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT<100KHz • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • MOTOR CONTROLS N - . |
| Features | A 75 W - 55 to 150 °C 150 °C E 55/150/56 1/4 203 BUZ42 THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _ amb Thermal resistance junction-ambient max 1.67 °C/W max 75 °CIW ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters Test Conditions OFF V(BR) oss Drain-source breakdown voltage 10= 250 p,A VGs= 0 500 loss Zero gate voltage Vos. |
| Part Number | BUZ42 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel Mosfet Transistor BUZ42 ·FEATURES ·4A, 500V ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for applicati. |
| Features |
·4A, 500V ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring. |
| Part Number | BUZ42 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 42 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 42 VDS 500 V ID 4A RDS(on) 2Ω Package TO-220 AB Ordering Code C67078-S1311-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A ID IDpuls 16 TC = 3. |
| Features | ic Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 500 3 0.1 10 10 1.6 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 2 VGS = 20 V, VDS = 0 V Drain-Sour. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ40 |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ40B |
Siemens Semiconductor Group |
Power Transistor |
|
| 3 | BUZ40B |
INCHANGE |
N-Channel MOSFET |
|
| 4 | BUZ41A |
Siemens Semiconductor Group |
Power Transistor |
|
| 5 | BUZ41A |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 6 | BUZ41A |
STMicroelectronics |
N-Channel MOSFET |
|
| 7 | BUZ41A |
INCHANGE |
N-Channel MOSFET |
|
| 8 | BUZ44A |
Siemens Semiconductor Group |
Power Transistor |
|
| 9 | BUZ44A |
INCHANGE |
N-Channel MOSFET |
|
| 10 | BUZ45 |
Intersil Corporation |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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