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| Part Number | BUX66 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUX66 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier . |
| Features | stance, Junction to Case MAX UNIT 5.0 ℃/W BUX66/A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUX66 BUX66A IC= -50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.15A V. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUX60 |
INCHANGE |
NPN Transistor |
|
| 2 | BUX60 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | BUX61 |
INCHANGE |
NPN Transistor |
|
| 4 | BUX62 |
TT |
SILICON NPN BIPOLAR TRANSISTOR |
|
| 5 | BUX62 |
INCHANGE |
NPN Transistor |
|
| 6 | BUX63 |
INCHANGE |
NPN Transistor |
|
| 7 | BUX63 |
Semelab |
Bipolar NPN Device |
|
| 8 | BUX64 |
INCHANGE |
NPN Transistor |
|
| 9 | BUX65 |
SEME-LAB |
Bipolar NPN Device |
|
| 10 | BUX65 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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