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| Part Number | BUV70 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUV70 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor controls, switching mode power supplies applications. Absolute maximum rat. |
| Features | TRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; Ib=0 600 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 VCE(sat) Collector-Emitter Saturation Voltage IC= 9A; IB= 3A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current hFE-1 DC Current Gain IC= 9A; IB= 3A VCE=. |
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Desde 2024. D4U Semiconductor.
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