Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BUS50 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUS50 |
| Manufacturer | ON Semiconductor |
| Title | NPN Silicon Power Transistors |
| Description | ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistors The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery SWITCHMODE applications such as: • Switching Regulators • In. |
| Features | IoI IB IBM PD ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range TJ, Tstg ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic Symbol ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case RθJC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎfor Soldering Purposes: ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
| Part Number | BUS50 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 125V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is critical.It is particul. |
| Features | Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 35A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 70A; IB= 7A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 35A; IB= 2A VBE(sat)-2 Base-Emitter Saturatio. |
| Part Number | BUS50 |
| Manufacturer | Seme LAB |
| Title | Bipolar NPN Device |
| Description | BUS50 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1.47 (0.058) 1.60 (. |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUS505 |
Power-One |
BUS DC/DC converters |
|
| 2 | BUS512 |
Power-One |
BUS DC/DC converters(3 WATT) |
|
| 3 | BUS515 |
Power-One |
BUS DC/DC converters(3 WATT) |
|
| 4 | BUS-61553 |
Data Device |
Advanced Integrated MUX Hybrid |
|
| 5 | BUS-61553-xxxx |
Data Device |
Advanced Integrated MUX Hybrid |
|
| 6 | BUS-61554-xxxx |
Data Device |
Advanced Integrated MUX Hybrid |
|
| 7 | BUS-61555-xxxx |
Data Device |
Advanced Integrated MUX Hybrid |
|
| 8 | BUS-61556-xxxx |
Data Device |
Advanced Integrated MUX Hybrid |
|
| 9 | BUS-61559 |
Data Device |
MIL-STD-1553 Bc-rt-mt Integrated Terminal |
|
| 10 | BUS-61559-xxxx |
Data Device |
MIL-STD-1553 Bc-rt-mt Integrated Terminal |
|
Desde 2024. D4U Semiconductor.
|