BUK9Y11-30B Datasheet. existencias, precio

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BUK9Y11-30B N-channel TrenchMOS logic level FET

BUK9Y11-30B

BUK9Y11-30B
BUK9Y11-30B BUK9Y11-30B
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Part Number BUK9Y11-30B
Manufacturer NXP (https://www.nxp.com/) Semiconductors
Description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 .
Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.4 Quick reference data I EDS(AL)S ≤ 112 mJ I ID ≤ 59 A I RDSon = 9.3 mΩ (typ) I Ptot ≤ 75 W 2. Pinning information Table 1. Pin 4 mb Pinning Description gate (G) mounting base; connected to drain (D) G Simplified outline mb Symbol D 1, 2, 3 source (S) 1 2 3 4 mbl798 S1 S2 S3 SOT669 (LFPAK) NXP Semiconductors BUK9Y11-30B www.DataSheet4U.com N-channel TrenchMOS logic level FET 3. O.
Datasheet Datasheet BUK9Y11-30B Data Sheet
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BUK9Y11-30B

nexperia
BUK9Y11-30B
Part Number BUK9Y11-30B
Manufacturer nexperia
Title N-channel MOSFET
Description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.3 Applications I Automotive systems I M.
Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.4 Quick reference data I EDS(AL)S ≤ 112 mJ I ID ≤ 59 A I RDSon = 9.3 mΩ (typ) I Ptot ≤ 75 W 2. Pinning information Table 1. Pinning Pin Description 1, 2, 3 source (S) 4 gate (G) mb mountin.


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