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BUK9K52-60RA |
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| Part Number | BUK9K52-60RA |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. 2. Features and benefits • Fully automotive qualified to AEC-Q101 at 175 °C • Repetitive Avalanche rated to 30 °C Tj rise. |
| Features |
• Fully automotive qualified to AEC-Q101 at 175 °C • Repetitive Avalanche rated to 30 °C Tj rise: • Tested to 1 Bn avalanche events • LFPAK copper clip package technology: • High robustness and reliability • Gull wing leads for high manufacturability and AOI 3. Applications • 12 V, 24 V and 48 V automotive systems • Repetitive avalanche topologies • Engine control • Transmission control • Actuator and auxiliary loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; . |
| Datasheet |
 BUK9K52-60RA Data Sheet
PDF 301.98KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUK9K52-60E |
NXP Semiconductors |
Dual N-channel TrenchMOS logic level FET |
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| 2 | BUK9K52-60E |
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Dual N-channel MOSFET |
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| 3 | BUK9K5R1-30E |
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| 4 | BUK9K5R6-30E |
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| 5 | BUK9K12-60E |
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| 6 | BUK9K12-60E |
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| 7 | BUK9K13-40H |
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| 8 | BUK9K13-60E |
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| 9 | BUK9K13-60RA |
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| 10 | BUK9K134-100E |
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Desde 2024. D4U Semiconductor.
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