BUK9K35-60RA |
Part Number | BUK9K35-60RA |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. 2. Features and benefits • Fully automotive qualified to AEC-Q101 at 175 °C • Repetitive Avalanche rated to 30 °C Tj rise. |
Features |
• Fully automotive qualified to AEC-Q101 at 175 °C • Repetitive Avalanche rated to 30 °C Tj rise: • Tested to 1 Bn avalanche events • LFPAK copper clip package technology: • High robustness and reliability • Gull wing leads for high manufacturability and AOI 3. Applications • 12 V, 24 V and 48 V automotive systems • Repetitive avalanche topologies • Engine control • Transmission control • Actuator and auxiliary loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; . |
Datasheet |
BUK9K35-60RA Data Sheet
PDF 312.01KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUK9K35-60E |
NXP Semiconductors |
Dual N-Channel MOSFET | |
2 | BUK9K35-60E |
nexperia |
Dual N-channel MOSFET | |
3 | BUK9K30-80E |
nexperia |
Dual N-channel MOSFET | |
4 | BUK9K32-100E |
NXP Semiconductors |
MOSFET | |
5 | BUK9K32-100E |
nexperia |
Dual N-channel MOSFET | |
6 | BUK9K12-60E |
NXP Semiconductors |
Dual N-Channel MOSFET | |
7 | BUK9K12-60E |
nexperia |
Dual N-channel MOSFET | |
8 | BUK9K13-40H |
nexperia |
Dual N-channel MOSFET | |
9 | BUK9K13-60E |
nexperia |
Dual N-channel MOSFET | |
10 | BUK9K13-60RA |
nexperia |
Dual N-channel MOSFET |