Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BU626A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BU626A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 3.3V(Max.) @ IC= 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power supply units of TV receivers. ABSOLUT. |
| Features | fied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2.5A ICES Collector Cutoff Current VCE= 1000V; VBE= 0 hFE-1 DC Current Gain IC= 10A; VCE= 1.5V hFE-2 DC Current Gain . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BU6222 |
Pan Overseas Electronic |
Ceramic / Capacitor |
|
| 2 | BU603 |
INCHANGE |
NPN Transistor |
|
| 3 | BU606 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | BU606D |
INCHANGE |
NPN Transistor |
|
| 5 | BU607 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | BU607D |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | BU608 |
INCHANGE |
NPN Transistor |
|
| 8 | BU608 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | BU6084B |
Jingdao |
Bipolar Junction Transistor |
|
| 10 | BU6084BF |
Jingdao |
Bipolar Junction Transistor |
|
Desde 2024. D4U Semiconductor.
|