Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BSS82C |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BSS82C |
| Manufacturer | Infineon Technologies AG |
| Title | PNP Silicon Switching Transistors |
| Description | BSS80, BSS82 PNP Silicon Switching Transistors High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN) 3 2 1 VPS05161 Type BSS80B BSS80C BSS82B BSS82C Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3. |
| Features | min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 50 V, IE = 0 Collector cutoff current VCB = 50 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA. |
| Part Number | BSS82C |
| Manufacturer | Zetex Semiconductors |
| Title | (BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS |
| Description | www.DataSheet4U.com SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 95 PARTMARKING DETAILS 7 BSS82B - CL BSS82C - CM BSS82B BSS82C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipatio. |
| Features | Time MAX. UNIT V V CONDITIONS. IC=-10µ A IC=-10mA* IE=-10µ A nA VCB=-50V, VCB=-50V, Tamb=150 °C VBE=-3V IC=-150mA,IB=-15mA* IC=-500mA,IB=50mA* IC=150mA,VCE=10V IC=150mA,VCE=10V VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz nA V V Rise Time Storage Time Fall Time * Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2% PAGE NUMBER . |
| Part Number | BSS82C |
| Manufacturer | Kexin |
| Title | PNP Silicon Switching Transistors |
| Description | SMD Type TransistIoCrs PNP Silicon Switching Transistors BSS80,BSS82 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emi. |
| Features | High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature . |
| Part Number | BSS82C |
| Manufacturer | Motorola |
| Title | GENERAL PURPOSE TRANSISTOR |
| Description | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO THERMAL CHARACTERISTICS Characteristic Symbol 'Total Device Dissipation, T/ = 25°C Derate above 25°C PD Storage Temperature Tsto "Thermal Resistance Junction to Ambient RflJA . |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS82 |
Infineon Technologies |
PNP Transistors |
|
| 2 | BSS82 |
Kexin |
PNP Silicon Switching Transistors |
|
| 3 | BSS82B |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 4 | BSS82B |
Infineon Technologies AG |
PNP Silicon Switching Transistors |
|
| 5 | BSS82B |
Zetex Semiconductors |
(BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS |
|
| 6 | BSS82B |
Kexin |
PNP Silicon Switching Transistors |
|
| 7 | BSS80 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 8 | BSS80 |
Infineon Technologies |
PNP Transistors |
|
| 9 | BSS80 |
Kexin |
PNP Silicon Switching Transistors |
|
| 10 | BSS806N |
Infineon Technologies |
Small-Signal-Transistor |
|
Desde 2024. D4U Semiconductor.
|