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| Part Number | BSS79C |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BSS79C |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN General Purpose Amplifier |
| Description | BSS79C BSS79C NPN General Purpose Amplifier • This device is for use as a medium power amplifier and swith requiring collector currents up to 500mA. • Sourced from process 19. • See BCW65C for characteristics. C E B SOT-23 Mark: CF Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol. |
| Features | BO IEBO hFE VCE(sat) Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 60V VCB = 60V, Ta = 150°C VEB = 3.0V, IC = 0 IC = 150mA, VCE = 10V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VCC = 30V, VBE(OFF) = 0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 100 Min. 75 40 6.0 10 10 10 3. |
| Part Number | BSS79C |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
| Description | NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 80, BSS 82 (PNP) q Type BSS 79 B BSS 79 C BSS 81 B BSS 81 C Marking CEs CFs CDs CGs Ordering Code (tape and reel) Q62702-S503 Q62702-S501 Q62702-S555 Q62702. |
| Features | .91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 60 V VCB = 60 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V DC current gain IC . |
| Part Number | BSS79C |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon Switching Transistors |
| Description | BSS79, BSS81 NPN Silicon Switching Transistors High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 (PNP) 3 2 1 VPS05161 Type BSS79B BSS79C BSS81B BSS81C Marking CEs CFs CDs CGs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3. |
| Features | min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA. |
| Part Number | BSS79C |
| Manufacturer | Zetex Semiconductors |
| Title | (BSS79B/C) SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR |
| Description | www.DataSheet4U.com SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 SEPTEMBER 95 PARTMARKING DETAILS 7 BSS79B - CE BSS79C - CF BSS79B BSS79C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipation. |
| Features | =150mA, VCE=10V IC= 150mA, VCE=10V Emitter-Base Breakdown Voltage V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo td tr ts tf BSS79B BSS79C MHz pF ns ns ns ns VCE=20V, IC=20mA f=100MHz VCB=10V, f=1MHz VCC=30V, IC=150mA IB1=IB2=15mA VCC=30V, IC=150mA IB1=IB2=15mA Rise Time Storage Time Fall Time PAGE NUMBER . |
| Part Number | BSS79C |
| Manufacturer | Kexin |
| Title | NPN Silicon Switching Transistors |
| Description | SMD Type TransistIoCrs NPN Silicon Switching Transistors BSS79,BSS81 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-em. |
| Features | High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature. |
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| 1 | BSS79 |
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| 2 | BSS79 |
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| 3 | BSS79 |
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| 4 | BSS79B |
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| 5 | BSS79B |
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| 6 | BSS79B |
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| 7 | BSS79B |
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| 8 | BSS79B |
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| 9 | BSS70 |
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| 10 | BSS70R |
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Desde 2024. D4U Semiconductor.
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