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| Part Number | BSS63 |
| Distributor | Stock | Price | Buy |
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| Part Number | BSS63 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP General Purpose Amplifier |
| Description | This device is designed for general-purpose amplifier and switch applications requiring high voltages. Sourced from process 74. C SOT-23 Mark: T3 E B Ordering Information Part Number BSS63 Marking T3 Package SOT-23 3L Packing Method Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exc. |
| Features | torage Temperature Range -100 -110 -6 -200 -55 to +150 V V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation BSS63 Rev. 1.1.0 1 www.fairchildsemi.com BSS63 — PNP General-Pur. |
| Part Number | BSS63 |
| Manufacturer | Infineon Technologies AG |
| Title | PNP Silicon AF an Swiching Transistors |
| Description | BCX42, BSS63 PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX41, BSS64 (NPN) 3 2 1 VPS05161 Type BCX42 BSS63 Maximum Ratings Parameter Marking DKs BMs 1=B 1=B Pin Configuration 2=E. |
| Features | ector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 Collector cutoff current VCE = 100 V, TA = 85 °C . |
| Part Number | BSS63 |
| Manufacturer | Motorola |
| Title | HIGH VOLTAGE TRANSISTOR |
| Description | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage R BE = 10 kn —Collector Current Continuous Symbol VCEO VCER THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, T/ = 25°C Derate above 25°C Storage Temperature PD Tstg •Thermal Resistance Junction . |
| Features | . |
| Part Number | BSS63 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR PNP TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO . |
| Features | . |
| Part Number | BSS63 |
| Manufacturer | NXP |
| Title | PNP transistor |
| Description | DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: BSS64. MARKING TYPE NUMBER BSS63 MARKING CODE(1) BM∗ Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 2 MAM256 Fig.1 Simplified out. |
| Features |
• Low current (max. 100 mA) • High voltage (max. 100 V). APPLICATIONS • High-voltage general purpose • Switching applications. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: BSS64. MARKING TYPE NUMBER BSS63 MARKING CODE(1) BM∗ Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made i. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS60 |
Philips |
PNP Transistoor |
|
| 2 | BSS60 |
Motorola |
DARLINGTON TRANSISTOR |
|
| 3 | BSS606N |
Infineon Technologies |
Small-Signal-Transistor |
|
| 4 | BSS60A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 5 | BSS61 |
NXP |
PNP transistors |
|
| 6 | BSS61 |
Philips |
PNP Transistoor |
|
| 7 | BSS61 |
Motorola |
DARLINGTON TRANSISTOR |
|
| 8 | BSS61A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 9 | BSS62 |
NXP |
PNP transistors |
|
| 10 | BSS62 |
Philips |
PNP Transistoor |
|
Desde 2024. D4U Semiconductor.
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