Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BSP42 |
| Part Number | BSP42 |
| Manufacturer | Zetex Semiconductors |
| Title | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| Description | SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSP32 ✪ BSP42 C PARTMARKING DETAIL – BSP42 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current . |
| Features | 1.0 1.2 120 12 90 100 250 1000 pF pF MHz ns ns MAX. UNIT V V V nA µA V V V V CONDITIONS. I C=100 µ A I C=10mA I E=10 µ A V CB=60V V CB=60V, T amb=125°C I C =150mA, I B=15mA I C =500mA, I B=50mA I C =150mA, I B=15mA I C =500mA, I B=50mA I C =100 µ A, V CE=5V I C =100mA, V CE=5V I C =500mA, V CE=5V V CB =10V, f =1MHz V EB =0.5V, f=1MHz I C=50mA, V CE=10V f =35MHz V CC =20V, I C =100mA I B1 =-I B2 =. |
BSP42 |
| Part Number | BSP42 |
| Manufacturer | Diotec Semiconductor |
| Title | Surface mount Si-Epitaxial PlanarTransistors |
| Description | BSP 40 ... BSP 43 NPN Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 1.65 4 ±0.2 ±0.3 6.5 ±0.1 3 ±0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehäuse 3.5 Weight approx. –. |
| Features |
t – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 60 V IE = 0, VCB = 60 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IEB. |
BSP42 |
| Part Number | BSP42 |
| Manufacturer | Zetex Semiconductors |
| Title | (BSP40 / BSP42) SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
| Description | SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 FEBRUARY 1996 7 C COMPLEMENTARY TYPES BSP40 BSP30 BSP42 BSP32 PARTMARKING DETAIL Device type in full www.DataSheet4U.com BSP40 BSP42 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emi. |
| Features | CM IC IB Ptot Tj:Tstg MAX. UNIT V V V V V µA BSP40 70 60 5 2 1 100 2 BSP42 90 80 UNIT V V V A A mA W °C -55 to +150 CONDITIONS. IC=100µA IC=100µA IC=10mA IC=10mA IE=10µA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). nA V V V V VCB=60V VCB=60V, Tamb=125°C IC =150mA, IB=15mA IC =500mA, IB=50mA IC =150mA, IB=15mA IC =500mA, IB=50mA IC =100µA, VCE=5V IC =100mA, VCE=5V IC . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP40 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|
| 2 | BSP40 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
|
| 3 | BSP40 |
Zetex Semiconductors |
(BSP40 / BSP42) SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
|
| 4 | BSP41 |
NXP |
NPN medium power transistors |
|
| 5 | BSP41 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|
| 6 | BSP43 |
NXP |
NPN medium power transistors |
|
| 7 | BSP43 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|
| 8 | BSP450 |
Siemens Semiconductor Group |
MiniPROFET |
|
| 9 | BSP450 |
Infineon Technologies AG |
MiniPROFET |
|
| 10 | BSP452 |
Siemens Semiconductor Group |
MiniPROFET |
|
Desde 2024. D4U Semiconductor.
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