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| Part Number | BPX43 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BPX43 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Description | Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t . |
| Features | q Especially suitable for applications from Bereich von 450 nm bis 1100 nm q Hohe Linearität q Hermetisch dichte Metallbauform (TO-18) mit Basisanschluβ, geeignet bis 125 °C q Gruppiert lieferbar Anwendungen q Lichtschranken für Gleich- und 450 nm to 1100 nm q High linearity q Hermetically sealed metal package (TO-18) with base connection suitable up to 125 °C q Available in groups Applications . |
| Part Number | BPX43 |
| Manufacturer | OSRAM |
| Title | Silicon NPN Phototransistor |
| Description | Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BPX 43 BPX 43 TO18 Silicon NPN Phototransistor Applications ——Industrial Automation (Machine controls, Light barriers, Vision controls) Features: ——Package: hermetically sealed ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral ran. |
| Features | ——Package: hermetically sealed ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Hermetically sealed metal can package (TO-18), suitable up to 125 °C ——Base connection ——High linearity ——Available in groups ——Suitable up to 125 °C Ordering Information Type Photocurrent VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE BPX 43 1250. |
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Desde 2024. D4U Semiconductor.
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