BLF178P transistor Datasheet, Distribuidor, stock y mejor precio

Part Number	BLF178P
Manufacturer	Ampleon
Title	Power LDMOS transistor
Description	A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Table 1. Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1000 50 1200 Gp (dB) 26 28.5 D (%) 75 75 1.2 Features and benefits  Typical pulsed.
Features	and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1200 W  Power gain = 28.5 dB  Efficiency = 75 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (10 MHz to 110 MHz)  Compliant to.

No.	Parte #	Fabricante	Descripción
1	BLF178XR	Ampleon	Power LDMOS transistor
2	BLF178XR	NXP	Power LDMOS transistor
3	BLF178XRS	Ampleon	Power LDMOS transistor
4	BLF178XRS	NXP	Power LDMOS transistor
5	BLF1721M8LS200	Ampleon	Power LDMOS transistor
6	BLF174XR	Ampleon	Power LDMOS transistor
7	BLF174XR	NXP	Power LDMOS transistor
8	BLF174XRS	Ampleon	Power LDMOS transistor
9	BLF174XRS	NXP	Power LDMOS transistor
10	BLF175	NXP	HF/VHF power MOS transistor

BLF178P Datasheet. existencias, precio