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| Part Number | BLF10M6LS200 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BLF10M6LS200 |
| Manufacturer | NXP |
| Title | Power LDMOS transistor |
| Description | 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier . |
| Features | and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications RF power amplifiers for ISM applications in the 700 MHz to 1000. |
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|---|---|---|---|---|
| 1 | BLF10M6LS135 |
Ampleon |
Power LDMOS transistor |
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| 2 | BLF10M6LS135 |
NXP |
Power LDMOS transistor |
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| 3 | BLF10M6LS160 |
Ampleon |
Power LDMOS transistor |
|
| 4 | BLF10M6LS160 |
NXP |
Power LDMOS transistor |
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| 5 | BLF10M6135 |
Ampleon |
Power LDMOS transistor |
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| 6 | BLF10M6135 |
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Power LDMOS transistor |
|
| 7 | BLF10M6160 |
Ampleon |
Power LDMOS transistor |
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| 8 | BLF10M6160 |
NXP |
Power LDMOS transistor |
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| 9 | BLF10M6200 |
Ampleon |
Power LDMOS transistor |
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| 10 | BLF10M6200 |
NXP |
Power LDMOS transistor |
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Desde 2024. D4U Semiconductor.
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