Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BLA6H1011-600 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BLA6H1011-600 |
| Manufacturer | NXP |
| Title | LDMOS avionics power transistor |
| Description | 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 1030 to 1090 . |
| Features | and benefits Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: Output power = 600 W Power gain = 17 dB Efficiency = 52 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designe. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BLA6H0912-500 |
Ampleon |
LDMOS avionics radar power transistor |
|
| 2 | BLA6H0912L-1000 |
Ampleon |
LDMOS avionics power transistor |
|
| 3 | BLA6H0912LS-1000 |
Ampleon |
LDMOS avionics power transistor |
|
| 4 | BLA6G1011-200R |
Ampleon |
Power LDMOS transistor |
|
| 5 | BLA6G1011L-200RG |
Ampleon |
Power LDMOS transistor |
|
| 6 | BLA6G1011LS-200RG |
Ampleon |
Power LDMOS transistor |
|
| 7 | BLA0912-250 |
NXP |
Avionics LDMOS transistor |
|
| 8 | BLA0912-250R |
NXP Semiconductors |
Avionics LDMOS power transistor |
|
| 9 | BLA10 |
BEDFORD OPTO TECHNOLOGY |
3mm LED STAND-OFF |
|
| 10 | BLA1011-10 |
NXP |
Avionics LDMOS transistor |
|
Desde 2024. D4U Semiconductor.
|