Part Number | BGA427 |
Distributor | Stock | Price | Buy |
---|
Part Number | BGA427 |
Manufacturer | Infineon Technologies AG |
Title | Si-MMIC-Amplifier |
Description | BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) 4 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) Noise figure NF = 2.2 dB at 1.8 GHz Typical device vol. |
Features | ote Thermal Resistance 1 Aug-02-2001 BGA427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50, Testfixture Appl.1 Insertion power gain |S21|2 f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1.8 GHz Return loss inp. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BGA420 |
Siemens Semiconductor Group |
Si-MMIC-Amplifierin | |
2 | BGA420 |
Infineon Technologies AG |
Si-MMIC-Amplifier | |
3 | BGA425 |
Siemens Semiconductor Group |
Si-MMIC-Amplifier | |
4 | BGA428 |
Infineon Technologies AG |
Gain and PCS Low Noise Amplifier | |
5 | BGA416 |
Infineon Technologies AG |
RF Cascode Amplifier | |
6 | BGA430 |
Infineon Technologies AG |
Broad Band High Gain LNA | |
7 | BGA123L4 |
Infineon |
Small Footprint Ultra Low Current Low Noise Amplifier | |
8 | BGA2001 |
NXP |
Silicon MMIC amplifier | |
9 | BGA2003 |
NXP |
Silicon MMIC amplifier | |
10 | BGA2012 |
NXP |
1900 MHz high linear low noise amplifier |