BFU580Q Datasheet. existencias, precio

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BFU580Q NPN wideband silicon RF transistor


BFU580Q
Part Number BFU580Q
Distributor Stock Price Buy
INCHANGE
BFU580Q
Part Number BFU580Q
Manufacturer INCHANGE
Title NPN Transistor
Description ·Low Noise Figure fT = 8.5GHz TYP. @IC= 30mA ; VCE= 8V; f= 900MHz ·High Gain ︱S21︱2 =13dB TYP. @IC= 30mA ; VCE= 8V; f= 900MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amp.
Features or Cutoff Current VCB= 6V; IE= 0 0.05 μA hFE DC Current Gain IC=30mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 30mA ; VCE= 8V; f= 900MHz 8 8.5 GHz Cre Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz 1.2 pF Ce Emitter capacitance IC=iC=0,VEB=0.5V,f=1MHz 3.0 pF CC Collector capacitance IE=ie=0,VCB=8V,f=1MHz 1.8 pF IC= 30mA ; VCE= 8V; f= 433MHz 17 17.5 ︱S21︱.

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