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| Part Number | BFP196W |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BFP196W |
| Manufacturer | Infineon Technologies AG |
| Title | Low Noise Silicon Bipolar RF Transistor |
| Description | Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz • Pb-free (RoHS complian. |
| Features | V mA mW °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 115 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-04 BFP196W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Val. |
| Part Number | BFP196W |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz ·High Gain ︱S21︱2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband am. |
| Features | ; IE= 0 hFE DC Current Gain IC= 30mA ; VCE= 6V fT Current-Gain—Bandwidth Product IC= 30mA ; VCE= 8V Cre Feedback Capacitance IE= 0 ; VCB= 6V; f= 1MHz Ce Emitter capacitance IC=iC=0; VEB=0.5V; f=1MHz CC Collector capacitance IE=ie=0; VCB=8V; f=1MHz ︱S21︱2 Insertion Power Gain IC= 30mA ; VCE= 6V; f= 1GHz NF Noise Figure IC= 5mA ; VCE= 6V; f= 1GHz IC= 5mA ; VCE= 6V; f= 2GHz MIN T. |
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Desde 2024. D4U Semiconductor.
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