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BF245 JFET VHF/UHF AMPLIFIER

BF245


BF245
Part Number BF245
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BF245

NJS
BF245
Part Number BF245
Manufacturer NJS
Title N-Channel FET
Description ^V£o^[£ii£ju <=5£>ni-L.onaucto'i Lr'iodiJLCtl, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors TELEPHONE: (973) 376-2922 (212) 227-6005 BF 245 A (973) 376-8960 AX BF 245 B BF246C BF 245 A, B, and C are N-channel junction field-effect transi.
Features 1 25'C) Gate-source breakdown voltage Drain-source short-circuit current (Vbs=15V,VGs-0) Gate-source voltage Gate-source pinch-off voltage (V/bs-16V,/D=10nA) -/ess -/QSS £5 £500 '^BfllGSS 230 BF245A: /oss BF245B: /DSS BF245C: /OSS 2.0 to 6.5 6to15 12 to 26 BF245A: -Vfes BF 245 B: -VQS BF245C: -VQS -* 0.4 to 2.2 1.6 to 3.8 3.2 to 7.5 0.5 to 8.0 nA nA V mA2> mA mA vzi V V V Dynamic charact.

BF245

NXP
BF245
Part Number BF245
Manufacturer NXP
Title N-channel silicon field-effect transistors
Description d drain s source g gate DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. 1 handbook, halfpage2 3 d g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static disc.
Features
 Interchangeability of drain and source connections
 Frequencies up to 700 MHz. APPLICATIONS
 LF, HF and DC amplifiers. PINNING PIN 1 2 3 SYMBOL DESCRIPTION d drain s source g gate DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. 1 handbook, halfpage2 3 d g s CAUTION The device is supplied in an antistatic packa.

BF245

Fairchild Semiconductor
BF245
Part Number BF245
Manufacturer Fairchild Semiconductor
Title N-Channel Amplifiers
Description BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. 1 TO-92 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VDG VGS IGF PD TJ, TSTG Parameter Drain-Gate Voltage Gate.
Features Common Source Forward gfs Transconductance VGS = 15V, VGS = 0 2 6 12 3 6.5 15 25 6.5 mA VGS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003 BF245A/BF245B/BF245C Package Dimensions TO-92 4.58
  –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38
  –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38
  –0..

BF245

ON Semiconductor
BF245
Part Number BF245
Manufacturer ON Semiconductor
Title JFET VHF/UHF Amplifiers
Description ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Channel Temperature Range 3 DRAIN Symb.
Features 2.0 BF245A, BF244A(2) 2.0 BF245B, BF244B 6.0 BF245C 12 1. On orders against the BF245, any or all subgroups might be shipped. 2. On orders against the BF244A, any or all subgroups might be shipped. 1 23 BF244A, BF244B CASE 29
  –11, STYLE 22 TO
  –92 (TO
  –226AA) 1 23 BF245, BF245A, BF245B, BF245C CASE 29
  –11, STYLE 23 TO
  –92 (TO
  –226AA) Typ Max Unit — — Vdc Vdc — 7.5 — 2.2 — 3.8 — 7.

BF245

Micro Electronics
BF245
Part Number BF245
Manufacturer Micro Electronics
Title N-CHANNEL JUNCTION FET
Description .
Features .

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