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| Distributor | Stock | Price | Buy |
|---|
BF1009S |
| Part Number | BF1009S |
| Manufacturer | Infineon Technologies AG |
| Title | Silicon N-Channel MOSFET Tetrode |
| Description | BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1. |
| Features | ctrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 300 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 9 V, VG1S = 0 , V. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF1009 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
| 2 | BF1009SR |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 3 | BF1009SW |
Infineon |
Silicon N-Channel MOSFET Tetrode |
|
| 4 | BF1005 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
| 5 | BF1005 |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 6 | BF1005 |
BYD |
ON/OFF Dimming LED Driver IC |
|
| 7 | BF1005R |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 8 | BF1005S |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
|
| 9 | BF1005S |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
| 10 | BF1005SR |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode |
|
Desde 2024. D4U Semiconductor.
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