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| Distributor | Stock | Price | Buy |
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BDX53B |
| Part Number | BDX53B |
| Manufacturer | Motorola Inc |
| Title | Plastic Medium-Power Complementary Silicon Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining V. |
| Features | Î ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
BDX53B |
| Part Number | BDX53B |
| Manufacturer | Comset Semiconductors |
| Title | SILICON POWER DARLINGTON TRANSISTORS |
| Description | NPN BDX53 – BDX53A – BDX53B – BDX53C SILICON POWER DARLINGTON TRANSISTORS The BDX53, BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in audio amplifiers, medium pow. |
| Features | . |
BDX53B |
| Part Number | BDX53B |
| Manufacturer | ON Semiconductor |
| Title | Plastic Medium-Power Complementary Silicon Transistors |
| Description | BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Volta. |
| Features |
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • These Devic. |
BDX53B |
| Part Number | BDX53B |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Description | The devices are manufactured in planar base island technology with monolithic Darlington configuration. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BDX53B BDX53C BDX54B BDX54C Marking BDX53B BDX53C BDX54B BDX54C R1 typ.= 10 kΩ R2 typ.= 150 Ω Package TO-. |
| Features |
■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Audio amplifiers ■ Linear and switching industrial equipment Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary O. |
BDX53B |
| Part Number | BDX53B |
| Manufacturer | TRANSYS |
| Title | NPN Transistor |
| Description | Transys Electronics L I M I T E D TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C www.DataSheet4U.com NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications . |
| Features | = 3 A; IB = 12 mA D.C. current gain IC = 3 A; VCE = 3 V VCBO VCEO IC Ptot Tj VCEsat hFE All dimin sions in mm. K V V A W °C V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO V V V BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C www.Dat. |
BDX53B |
| Part Number | BDX53B |
| Manufacturer | SavantIC |
| Title | Silicon NPN Power Transistors |
| Description | ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX54/A/B/C APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL . |
| Features | . |
BDX53B |
| Part Number | BDX53B |
| Manufacturer | Bourns |
| Title | NPN SILICON POWER DARLINGTONS |
| Description | www.DataSheet4U.com BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pi. |
| Features | rly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE 45 60 80 100 45 60 80 100 5 8 0.2 60 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 DataSheet4 U .com www.DataSheet4U.com BDX53, BDX53A, BDX53B, BDX53. |
BDX53B |
| Part Number | BDX53B |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat) = 2.0 V(Max) @ IC = 3.0 A ·Complement to Type BDX54B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. |
| Features | 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 12mA VECF C-E Diode Forward Voltage. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX53 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 2 | BDX53 |
Bourns Electronic Solutions |
NPN SILICON POWER DARLINGTONS |
|
| 3 | BDX53 |
TRANSYS |
NPN Transistor |
|
| 4 | BDX53 |
INCHANGE |
NPN Transistor |
|
| 5 | BDX53 |
Comset Semiconductors |
SILICON POWER DARLINGTON TRANSISTORS |
|
| 6 | BDX53 |
SavantIC |
Silicon NPN Power Transistors |
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| 7 | BDX53A |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 8 | BDX53A |
TRANSYS |
NPN Transistor |
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| 9 | BDX53A |
INCHANGE |
NPN Transistor |
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| 10 | BDX53A |
Bourns |
NPN SILICON POWER DARLINGTONS |
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Desde 2024. D4U Semiconductor.
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