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| Part Number | BDW94C |
| Distributor | Stock | Price | Buy |
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| Part Number | BDW94C |
| Manufacturer | Bourns |
| Title | PNP SILICON POWER DARLINGTONS |
| Description | BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and not recommended for new designs. TO-220. |
| Features | ase temperature at the rate of 0.64 W/°C. VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -12 -0.3 80 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1. |
| Part Number | BDW94C |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for h. |
| Features | nce, Junction to Case isc website：www.iscsemi.com MAX 1.5 UNIT ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW94 CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDW94A BDW94B IC= -50mA; IB= 0 BDW94C VCE(sat)-1 Collector-Emitter Saturation . |
| Part Number | BDW94C |
| Manufacturer | Multicomp |
| Title | Darlington Transistors |
| Description | Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 . |
| Features |
Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A • Monolithic construction with built-in-base-emitter shunt resistor Dimension Minimum Maximum Pin : 1. Base 2. Collector 3. Emi. |
| Part Number | BDW94C |
| Manufacturer | SavantIC |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. |
| Features | . |
| Part Number | BDW94C |
| Manufacturer | JILIN SINO |
| Title | NPN EPITAXIAL DARLINGTON TRANSISTOR |
| Description | of Changes 2016-3-9 201603A ：201603A 5/5 . |
| Features | z Complementary to BDW93C z High current capability z High switching speed z High reliability z RoHS product TO-220C ORDER MESSAGE Order codes BDW94C-O-C-N-B Marking BDW94C Halogen Free NO Package TO-220C Packaging Tube ：201603A 1/5 R ABSOLUTE RATINGS (Tc=25℃) — — — Parameter Symbol Collector- Emitter Voltage（VBE=0） VCES Collector- Emitter Voltage（IB=0） VCEO Emit. |
| Part Number | BDW94C |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Description | The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 1 2 3 TO-220 INTERNAL SCH. |
| Features | Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C. |
| Part Number | BDW94C |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively January 2005 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise note. |
| Features | . |
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| 1 | BDW94 |
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| 2 | BDW94 |
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| 5 | BDW94 |
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| 6 | BDW94 |
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| 7 | BDW94A |
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| 8 | BDW94A |
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| 9 | BDW94A |
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| 10 | BDW94A |
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