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BDW94C PNP Transistor Datasheet


BDW94C

INCHANGE
BDW94C
Part Number BDW94C
Manufacturer INCHANGE
Title Darlington Transistors PNP Epitaxial Sil
Description ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for h...
Features nce, Junction to Case isc website:www.iscsemi.com MAX 1.5 UNIT ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW94 CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDW94A BDW94B IC= -50mA; IB= 0 BDW94C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -0.1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -5A; IB= -20mA VBE(sat)-1 Base-Emitter Saturation Volt...

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Stock 17282 In Stock
Price
1 units: 1.04 USD
10 units: 0.522 USD
100 units: 0.436 USD
500 units: 0.391 USD
1200 units: 0.39 USD
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BDW94C

STMicroelectronics
BDW94C
Part Number BDW94C
Manufacturer STMicroelectronics
Title COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Description The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is .
Features Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-of.

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BDW94C

Multicomp
BDW94C
Part Number BDW94C
Manufacturer Multicomp
Title Darlington Transistors
Description Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emit.
Features Designed for general-purpose amplifier and low speed switching applications
• Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C
• Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A
• Monolithic construction wit.

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BDW94C

NJS
BDW94C
Part Number BDW94C
Manufacturer NJS
Title Silicon PNP Power Transistor
Description • Collector Current -lc= -12A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -45V(Min)- BDW94; -60V(Min)- BDW94A -SOV(Min)- BDW94B; -100V(M.
Features j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT
•c/w Quality Semi-Conductors r i'ii 12 3 -vw — l-wv — I — * R' 12 -3 "H 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package r , rJTL, jlUl^t A / MOOV *1 */* soi'. . ^j"*~L K , H G *- R|*- V tc ! j mm DIM MIN MAX A 15.70 15.90.

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BDW94C

JILIN SINO
BDW94C
Part Number BDW94C
Manufacturer JILIN SINO
Title NPN EPITAXIAL DARLINGTON TRANSISTOR
Description of Changes 2016-3-9 201603A :201603A 5/5 .
Features z Complementary to BDW93C z High current capability z High switching speed z High reliability z RoHS product TO-220C ORDER MESSAGE Order codes BDW94C-O-C-N-B Marking BDW94C Halogen Free NO Package TO-220C Packaging Tube :201603A 1/5 R ABSOLUTE RATINGS (Tc=25℃) — — — Pa.

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BDW94C

Fairchild Semiconductor
BDW94C
Part Number BDW94C
Manufacturer Fairchild Semiconductor
Title PNP Epitaxial Silicon Transistor
Description BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • .
Features .

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