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BDW94B COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Datasheet


BDW94B

STMicroelectronics
BDW94B
Part Number BDW94B
Manufacturer STMicroelectronics (https://www.st.com/)
Title 12 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220
Description The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 1 2 3 TO-220 INTERNAL SCH...
Features Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C for BDW94B for BDW93C/94C V EB = 5 V I C = 100 mA for BDW94B for BDW 93C/94C IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 3 A IC = 5 A I C = 10 A IF = 5 A I F = 10 A IC = 1 A f = 1 MHz V CE = 10 ...

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All other distributors
Stock 27 In Stock
Price
16 units: 0.84 USD
4 units: 1.344 USD
1 units: 1.68 USD
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BDW94B

Fairchild Semiconductor
BDW94B
Part Number BDW94B
Manufacturer Fairchild Semiconductor
Title PNP Transistor
Description BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respective.
Features C ICEO Collector Cut-off Current : BDW94 : BDW94A : BDW94B : BDW94C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = - 45V, IB = 0 VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCE = - 100V, IB = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = -3A VCE = - 3V, IC = - 5A VCE = - 3V, IC = - 10A IC = - 5A, IB =.

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BDW94B

Multicomp
BDW94B
Part Number BDW94B
Manufacturer Multicomp
Title Darlington Transistors
Description Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emit.
Features Designed for general-purpose amplifier and low speed switching applications
• Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C
• Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A
• Monolithic construction wit.

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BDW94B

INCHANGE
BDW94B
Part Number BDW94B
Manufacturer INCHANGE
Title PNP Transistor
Description ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min.
Features nce, Junction to Case isc website:www.iscsemi.com MAX 1.5 UNIT ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW94 CONDITIONS VCEO(SUS) Collector-Emitter S.

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BDW94B

Bourns
BDW94B
Part Number BDW94B
Manufacturer Bourns
Title PNP SILICON POWER DARLINGTONS
Description BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C.
Features ase temperature at the rate of 0.64 W/°C. VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -12 -0.3 80 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMAT.

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BDW94B

NJS
BDW94B
Part Number BDW94B
Manufacturer NJS
Title Silicon PNP Power Transistor
Description • Collector Current -lc= -12A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -45V(Min)- BDW94; -60V(Min)- BDW94A -SOV(Min)- BDW94B; -100V(M.
Features j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT
•c/w Quality Semi-Conductors r i'ii 12 3 -vw — l-wv — I — * R' 12 -3 "H 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package r , rJTL, jlUl^t A / MOOV *1 */* soi'. . ^j"*~L K , H G *- R|*- V tc ! j mm DIM MIN MAX A 15.70 15.90.

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