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| Part Number | BDW94B |
| Distributor | Stock | Price | Buy |
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| Part Number | BDW94B |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Description | The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 1 2 3 TO-220 INTERNAL SCH. |
| Features | Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C. |
| Part Number | BDW94B |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Transistor |
| Description | BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Paramete. |
| Features | C ICEO Collector Cut-off Current : BDW94 : BDW94A : BDW94B : BDW94C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = - 45V, IB = 0 VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCE = - 100V, IB = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = -3A VCE = - 3V, IC = - 5A VCE = - 3V, IC = - 10A IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA IC = - 5A, IB = - 20mA IC = - 10A, IB = - 100mA IF = - 5A IF = -1 0. |
| Part Number | BDW94B |
| Manufacturer | SavantIC |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. |
| Features | . |
| Part Number | BDW94B |
| Manufacturer | Multicomp |
| Title | Darlington Transistors |
| Description | Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 . |
| Features |
Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A • Monolithic construction with built-in-base-emitter shunt resistor Dimension Minimum Maximum Pin : 1. Base 2. Collector 3. Emi. |
| Part Number | BDW94B |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for h. |
| Features | nce, Junction to Case isc website：www.iscsemi.com MAX 1.5 UNIT ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW94 CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDW94A BDW94B IC= -50mA; IB= 0 BDW94C VCE(sat)-1 Collector-Emitter Saturation . |
| Part Number | BDW94B |
| Manufacturer | Bourns |
| Title | PNP SILICON POWER DARLINGTONS |
| Description | BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and not recommended for new designs. TO-220. |
| Features | ase temperature at the rate of 0.64 W/°C. VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -12 -0.3 80 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDW94 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 2 | BDW94 |
Bourns |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDW94 |
NJS |
Silicon PNP Power Transistor |
|
| 4 | BDW94 |
Multicomp |
Darlington Transistors |
|
| 5 | BDW94 |
INCHANGE |
PNP Transistor |
|
| 6 | BDW94 |
SavantIC |
Silicon PNP Power Transistor |
|
| 7 | BDW94A |
Bourns |
PNP SILICON POWER DARLINGTONS |
|
| 8 | BDW94A |
Fairchild Semiconductor |
PNP Transistor |
|
| 9 | BDW94A |
NJS |
Silicon PNP Power Transistor |
|
| 10 | BDW94A |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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