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| Part Number | BD911 |
| Distributor | Stock | Price | Buy |
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| Part Number | BD911 |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMU. |
| Features | CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB = 5 V I C = 100 mA for BD909/910 for BD911/912 I B = 0.5 A IB = 2.5 A IB = 2.5 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V 40 15 5 3 80 100. |
| Part Number | BD911 |
| Manufacturer | CDIL |
| Title | NPN PLASTIC POWER TRANSISTOR |
| Description | SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Emitter and Collector Current Base Current Total Power Dissipation up to Tc=25oC Junction Temperature Temperature Range VCEO VCBO VEBO IE, IC IB Ptot Tj Tstg ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Speci. |
| Features | . |
| Part Number | BD911 |
| Manufacturer | Comset Semiconductors |
| Title | Silicon NPN Power Transistors |
| Description | SEMICONDUCTORS BD909 – BD911 SILICON POWER TRANSISTORS The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IE IB Pt T. |
| Features | st Condition(s) Min Typ Max ICBO Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*) DC Current Gain (*) DC Current Gain (*) Transition Frequency BD909 BD911 BD909 TJ = 150°C BD911 BD909 BD911 BD909 VEB = 5 V, IC = 0. |
| Part Number | BD911 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type BD912 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applica. |
| Features | TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V ICBO Collector Cutoff Cu. |
| Part Number | BD911 |
| Manufacturer | RECTRON |
| Title | Power Transistors |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi. |
| Features | . |
| Part Number | BD911 |
| Manufacturer | nELL |
| Title | Complementary Silicon Power Transistors |
| Description | The BD911 is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is BD912. 12 3 TO-220AB INTERNAL SCHEMATIC DIAGRAM C (2) (1) B (3) E BD911(NPN) C (2) (1) B (3) E BD912(PNP). |
| Features | Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 3 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area DESCRIPTION The BD911 is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type . |
| Part Number | BD911 |
| Manufacturer | SEMTECH |
| Title | NPN Complementary Silicon Power Transistors |
| Description | BD909 / BD911 NPN Complementary Silicon Power Transistors TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Currentt Total Power Dissipation @ TC ≤ 25 OC Operating Junction Temperature. |
| Features | . |
| Part Number | BD911 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package. / Features ，， BD912 。 High VCEO, larger IC, complement to BD912. / Applications 。 Use in power linear and switching applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Cl. |
| Features | ，， BD912 。 High VCEO, larger IC, complement to BD912. / Applications 。 Use in power linear and switching applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BD911 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Colle. |
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|---|---|---|---|---|
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