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| Part Number | BD897A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD897A |
| Manufacturer | SavantIC |
| Title | (BD895A - BD899A) SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package www.datasheet4u.com ·Complement to type BD896A/898A/900A ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD895A/897A/899. |
| Features | e BD897A BD899A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD895A ICBO Collector cut-off current BD897A BD899A BD895A ICEO Collector cut-off current BD897A BD899A IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time IC=4A ,IB=16mA IC=4A ; VCE=3V VCB=45V, IE=0 TC=100 VCB=60V, IE=0 TC=100 VCB=80V, IE=0 TC=100 VCE=. |
| Part Number | BD897A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD898A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . |
| Features | tion to Ambient 62.5 ℃/W BD897A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD897A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA VBE(on) Base-Emitter On . |
| Part Number | BD897A |
| Manufacturer | Bourns |
| Title | NPN SILICON POWER DARLINGTONS |
| Description | BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VI. |
| Features | of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VCBO VCEO VEBO IC IB Ptot Ptot TA Tj Tstg VALUE 45 60 80 45 60 80 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTO. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD897 |
Power Innovations Limited |
NPN Transistor |
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| 2 | BD897 |
INCHANGE |
NPN Transistor |
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| 3 | BD897 |
SavantIC |
(BD895 - BD899) SILICON POWER TRANSISTOR |
|
| 4 | BD890CS |
Pan Jit International |
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
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| 5 | BD890CT |
Pan Jit International |
THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS |
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| 6 | BD890S |
Pan Jit International |
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
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| 7 | BD890T |
Pan Jit International |
THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS |
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| 8 | BD890YS |
Pan Jit International |
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|
| 9 | BD890YT |
Pan Jit International |
THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|
| 10 | BD8918F |
Rohm |
IC Care Interface |
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Desde 2024. D4U Semiconductor.
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