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| Part Number | BD743A |
| Distributor | Stock | Price | Buy |
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| Part Number | BD743A |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package www.datasheet4u.com ·Complement to type BD744/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD743/A/B/C Absolute maximum r. |
| Features | tter breakdown voltage BD743A IC=30mA; IB=0 BD743B BD743C VCEsat-1 VCEsat-2 VBE -1 VBE -2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD743/A ICEO Collector cut-off current BD743B/C BD743 BD743A ICBO Collector cut-off current BD743B BD743C IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC . |
| Part Number | BD743A |
| Manufacturer | Comset Semiconductors |
| Title | Silicon NPN Power Transistors |
| Description | SEMICONDUCTORS BD743 – A – B – C SILICON POWER TRANSISTORS The BD743 series are NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching application. High current capability and high power dissipation. PNP complements are BD744-A-B-C Compliance to RoHS. A. |
| Features |
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BD743 – A – B – C THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings Junction To Case Thermal Resistance Junction To Free Air Thermal Resistance Value 1.4 62.5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current ICEO Collector Cutoff Current VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V. |
| Part Number | BD743A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 90W@ IC= 25℃ ·15A Continuous Collector Current ·Complement to Type BD744A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purp. |
| Features | Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A;. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD743 |
INCHANGE |
NPN Transistor |
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| 2 | BD743 |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTORS |
|
| 3 | BD743 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BD743 |
Comset Semiconductors |
Silicon NPN Power Transistors |
|
| 5 | BD743B |
INCHANGE |
NPN Transistor |
|
| 6 | BD743B |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | BD743B |
Comset Semiconductors |
Silicon NPN Power Transistors |
|
| 8 | BD743B |
Bourns |
NPN SILICON POWER TRANSISTORS |
|
| 9 | BD743C |
INCHANGE |
NPN Transistor |
|
| 10 | BD743C |
Bourns |
NPN SILICON POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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