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| Part Number | BD706 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD706 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min.) ·Complement to Type BD705 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSO. |
| Features | egistered trademark isc Silicon PNP Power Transistor BD706 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -4V ICEO Collector Cutoff Current ICBO Collector Cutoff Current. |
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Desde 2024. D4U Semiconductor.
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