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| Part Number | BD679 |
| Distributor | Stock | Price | Buy |
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| Part Number | BD679 |
| Manufacturer | Savantic |
| Title | Silicon NPN Darligton Power Transistors |
| Description | ·With TO-126 package ·Complement to type BD676/678/680 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general–purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25. |
| Features | W VALUE 100 3.12 UNIT K/W K/W SavantIC Semiconductor Silicon NPN Darligton Power Transistors Product Specification BD675/BD677/BD679 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage BD675 BD677 IC=100mA; IB=0 BD679 V(BR)CBO Collector-base breakdown voltage BD675 BD677 IC=1mA; IE=0 BD679 V(BR)EBO Emitter-base br. |
| Part Number | BD679 |
| Manufacturer | TRANSYS |
| Title | NPN TRANSISTORS |
| Description | SYMBOL BD675 BD675A 45 45 677 677A 60 60 5 4 0.1 www.DataSheet.net/ 679 681 679A 80 80 100 100 683 UNITS Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation@ Tc=25 oC Derate above 25 C Operating & Storage Junction Temperatu. |
| Features | =5V, IC =0 O MIN MAX UNITS 45 60 80 100 120 500 0.2 2.0 2.0 V Collector-Cut off Current ICEO ICBO ICBO µA mA Emitter cut off Current IEBO mΑ Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package EC B DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Emitter Sa. |
| Part Number | BD679 |
| Manufacturer | Central Semiconductor |
| Title | NPN SILICON POWER DARLINGTON TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER TO-126 CASE BD675 MAXIMUM RATINGS: (TC=25°C) SYMBOL BD675A Collector-Base Volta. |
| Features | IC=50mA (BD679, BD679A) 80 BVCEO IC=50mA (BD681) 100 BVCEO IC=50mA (BD683) 120 VCE(SAT) IC=1.5A, IB=30mA (Non-A) VCE(SAT) IC=2.0A, IB=40mA (A) VBE(ON) VCE=3.0V, IC=1.5A (Non-A) VBE(ON) VCE=3.0V, IC=2.0A (A) hFE VCE=3.0V, IC=1.5A (Non-A) 750 hFE VCE=3.0V, IC=2.0A (A) 750 hfe VCE=3.0V, IC=1.5A, f=1.0MHz 1.0 MAX 200 2.0 500 2.0 2.5 2.8 2.5 2.5 BD683 120 120 UNITS V V V A mA W °. |
| Part Number | BD679 |
| Manufacturer | STMicroelectronics |
| Title | Complementary power Darlington transistors |
| Description | The devices are manufactured in planar base island technology with monolithic Darlington configuration. . 1 2 3 SOT-32 Figure 1. Internal schematic diagram R1 typ.= 15 KΩ Table 1. Device summary Order codes BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 Marking BD677 BD677A BD67. |
| Features |
■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. . 1 2 3 SOT-32 Figure 1. Internal schematic diagram R1 typ.= 15 KΩ Table 1. Device summary O. |
| Part Number | BD679 |
| Manufacturer | ON Semiconductor |
| Title | NPN Silicon Transistor |
| Description | BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Mon. |
| Features |
• High DC Current Gain • Monolithic Construction • Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 • BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G VCEO Vdc 45 60 80 100 Collector−Base Vol. |
| Part Number | BD679 |
| Manufacturer | CDIL |
| Title | NPN PLASTIC POWER DARLINGTON TRANSISTORS |
| Description | SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation@ Ta=25oC Derate above 25ºC Total Power Dissipation@ Tc=25oC Derate above 25ºC Operating & Storage Junction Temperature Range VCBO VCEO VEBO IC IB PD PD Tj,Tstg BD67. |
| Features | VCEO* ICEO ICBO IC =50mA, IB =0 BD675/BD675A BD677/BD677A BD679/BD679A BD681 BD683 VCE=half rated VCEO,IB=0 VCB =rated VCBO, IE=0 45 60 80 100 120 500 0.2 Emitter cut off Current ICBO IEBO VCB =rated VCBO, IE=0 TC=100OC VEB =5V, IC =0 2.0 2.0 BD675_683 Rev_2 101002E Continental Device India Limited Data Sheet UNITS V V V A A W mW/ ºC W W / ºC ºC ºC/W ºC/W UNITS V µA mA mΑ Page 1 of 4 N. |
| Part Number | BD679 |
| Manufacturer | Multicomp |
| Title | NPN Power Darlington Transistors |
| Description | BD679 NPN Power Darlington Transistors Feature: • NPN Plastic Power Darlington Transistors. TO-126 Plastic Package Dimensions A B C D E F G L M N P S Pin Configuration: 1. Emitter 2. Collector 3. Base Minimum Maximum 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 (Typical) 0.49 0.75 4.5 (Typical) 15.7 . |
| Features |
• NPN Plastic Power Darlington Transistors. TO-126 Plastic Package Dimensions A B C D E F G L M N P S Pin Configuration: 1. Emitter 2. Collector 3. Base Minimum Maximum 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 (Typical) 0.49 0.75 4.5 (Typical) 15.7 (Typical) 1.27 (Typical) 3.75 (Typical) 3.0 3.2 2.5 (Typical) Dimensions : Millimetres Page 1 09/05/08 V1.1 BD679 NPN Power Darlington Transisto. |
| Part Number | BD679 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD680 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplif. |
| Features | CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 80V; IB= 0 VCB= 80V; IE= 0 VCB= 80V; IE= 0;TC= 100℃ . |
| Part Number | BD679 |
| Manufacturer | Motorola Inc |
| Title | NPN Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD675/D Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD. |
| Features | ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Symbol VCEO VCB VEB IC IB BD675 BD675A 45 45 BD677 . |
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