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BD534 Complementary power transistors


BD534
Part Number BD534
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Motorola
BD534
Part Number BD534
Manufacturer Motorola
Title Power Transistor
Description .
Features .
Fairchild Semiconductor
BD534
Part Number BD534
Manufacturer Fairchild Semiconductor
Title PNP Epitaxial Silicon Transistor
Description BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Param.
Features - 5V, IC = - 10mA VCE = - 2V, IC = - 2A 40 20 15 25 15 30 15 40 20 - 0.8 - 1.5 3 12 75 100 - 0.8 V V V MHz Min. Typ. Max. - 100 - 100 - 100 - 100 - 100 - 100 -1 Units µA µA µA µA µA µA mA ICES Collector Cut-off Current IEBO hFE Emitter Cut-off Current * DC Current Gain : ALL DEVICE : BD534/536 : BD538 : BD534/536 : BD538 : ALL DEVICE : ALL DEVICE hFE hFE Groups J K VCE = - 2V, IC = - 2A VC.
SavantIC
BD534
Part Number BD534
Manufacturer SavantIC
Title POWER TRANSISTOR
Description ·With TO-220C package ·Complement to type BD533/535/537 ·Low saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD534 VCBO Collector-ba.
Features e Collector-emitter saturation voltage Base-emitter on voltage BD534 CONDITIONS IC=-2 A;IB=-0.2 A IC=-6 A;IB=-0.6 A IC=-2A ; VCE=-2V VCB=-45V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 VCE=-80V; VBE=0 VEB=5V; IC=0 BD534/536 20 IC=-10mA ; VCE=-5V BD538 15 IC=-0.5A ; VCE=-2V Group: J IC=-2A ; VCE=-2V Group: K Group: J IC=-3A ; VCE=-2V Group: K IC=-0.5A ; VCE=-1V 20 3 12 MHz .
INCHANGE
BD534
Part Number BD534
Manufacturer INCHANGE
Title PNP Transistor
Description ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) ·Complement to Type BD533 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications. ABS.
Features icon PNP Power Transistor BD534 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage VCE(sat)-1 Collector-Emitter Voltage VCE(sat)-2 Collector-Emitter Voltage Sustaining IC= -30mA; IB= 0 Saturation IC= -2A; IB= -0.2A Saturation IC= -6A; IB= -0.6A VBE(on) Base-Emitter On Voltage IC= -2A ; VCE= -2V MIN TYP MAX UN.

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