Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BD533 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD533 |
| Manufacturer | STMicroelectronics |
| Title | Complementary power transistors |
| Description | t(sThe devices are manufactured in Planar ctechnology with “Base Island” layout. The duresulting transistor shows exceptional high gain roperformance coupled with very low saturation Obsolete Product(s) - Obsolete Pvoltage. The PNP types are BD534 and BD536. 3 2 1 TO-220 Figure 1. Internal schemati. |
| Features |
.
■ BD533, BD535, and BD537 are NPN transistors )Description t(sThe devices are manufactured in Planar ctechnology with “Base Island” layout. The duresulting transistor shows exceptional high gain roperformance coupled with very low saturation Obsolete Product(s) - Obsolete Pvoltage. The PNP types are BD534 and BD536. 3 2 1 TO-220 Figure 1. Internal schematic diagrams Table 1. Device summary . |
| Part Number | BD533 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD534, BD536 and BD538 respectively 1 TO-220 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Col. |
| Features | : ALL DEVICE Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.8 1.5 3 12 75 100 0.8 V V V MHz Min. Typ. Max. 100 100 100 100 100 100 1 Units µA µA µA µA µA µA mA ICES IEBO hFE hFE hFE Groups J K VCE = 2V, IC = 2A. |
| Part Number | BD533 |
| Manufacturer | SavantIC |
| Title | (BD533 - BD537) SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type BD534/536/538 ·Low saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD533 VCBO Collector-ba. |
| Features | or-emitter saturation voltage Base-emitter on voltage BD533 CONDITIONS IC=2 A;IB=0.2 A IC=6 A;IB=0.6 A IC=2A ; VCE=2V VCB=45V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 VCE=45V; VBE=0 VCE=60V; VBE=0 VCE=80V; VBE=0 VEB=5V; IC=0 BD533/535 20 IC=10mA ; VCE=5V BD537 15 IC=0.5A ; VCE=2V Group: J IC=2A ; VCE=2V Group: K Group: J IC=3A ; VCE=2V Group: K IC=0.5A ; VCE=1V 20 3 12 MHz 40 15 100 40 30 75 1 mA 0.1 mA . |
| Part Number | BD533 |
| Manufacturer | Motorola |
| Title | Power Transistor |
| Description | . |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD530 |
Motorola Inc |
PNP SILICON AMPLIFIER TRANSISTORS |
|
| 2 | BD5309-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 3 | BD5309-2M |
ROHM |
CMOS Voltage Detector |
|
| 4 | BD5310-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 5 | BD5310-2M |
ROHM |
CMOS Voltage Detector |
|
| 6 | BD5311-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 7 | BD5311-2M |
ROHM |
CMOS Voltage Detector |
|
| 8 | BD5312-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
| 9 | BD5312-2M |
ROHM |
CMOS Voltage Detector |
|
| 10 | BD5313-2C |
Rohm |
Free Time Delay Setting CMOS Voltage Detector |
|
Desde 2024. D4U Semiconductor.
|