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| Part Number | BD180 |
| Distributor | Stock | Price | Buy |
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| Part Number | BD180 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·DC Current Gain- : hFE= 40-250(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -80V(Min) ·Complement to type BD179 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. A. |
| Features | tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gai. |
| Part Number | BD180 |
| Manufacturer | Motorola Inc |
| Title | Plastic Medium Power Silicon PNP Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD180/D Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD18. |
| Features | ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ. |
| Part Number | BD180 |
| Manufacturer | TRANSYS |
| Title | EPITAXIAL SILICON POWER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45 . |
| Features | . |
| Part Number | BD180 |
| Manufacturer | CDIL |
| Title | EPITAXIAL SILICON POWER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45 . |
| Features | . |
| Part Number | BD180 |
| Manufacturer | ON Semiconductor |
| Title | POWER TRANSISTOR PNP SILICON |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD180/D Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD18. |
| Features | ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ. |
| Part Number | BD180 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter *Collector-Base Voltage : . |
| Features | On Voltage Current Gain Bandwidth Product Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 100 - 100 -1 40 15 250 - 0.8 - 1.3 3 V V MHz Typ. Max. Units V V V µA µA µA mA ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 150mA VCE = - 2V, IC = - 1A IC = -1 A , IB = - 0.1A VCE = - 2V, IC = -1 A VCE = -10V, IC = - 250mA IEBO hFE1. |
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