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BD137 Silicon NPN Transistor Datasheet


BD137

Toshiba
BD137
Part Number BD137
Manufacturer Toshiba (https://www.toshiba.com/)
Title Bipolar Transistors - BJT 1.5A 60V 12.5W NPN
Description SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Vol...
Features . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 45 60 80 45 60 80 0.5 1.5 PC L stg 6.5 150 -55-150 UNIT 1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE TO— 126 TOSHIBA 2-8P1A Weight : 0.72g ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SY...

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Mouser Electronics
All other distributors
Stock 21718 In Stock
Price
1 units: 0.71 USD
10 units: 0.62 USD
100 units: 0.451 USD
500 units: 0.327 USD
1000 units: 0.272 USD
3000 units: 0.263 USD
6000 units: 0.255 USD
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BD137

INCHANGE
BD137
Part Number BD137
Manufacturer INCHANGE
Title NPN Transistor
Description ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD138 ·Minimum Lot-t.
Features c & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on.

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BD137

Unisonic Technologies
BD137
Part Number BD137
Manufacturer Unisonic Technologies
Title NPN POWER TRANSISTORS
Description , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNO.
Features * High current (max.1.5A) * Low voltage (max.60V) 1 SOT-223 1 TO-126  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD137L-x-AA3-R BD137G-x-AA3-R BD137L-xx-T60-K BD137G-xx-T60-K Package SOT-223 TO-126 Pin Assignment 1 2 3 B C E E C B Packing Tape Reel Bulk BD137.

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BD137

Central Semiconductor
BD137
Part Number BD137
Manufacturer Central Semiconductor
Title NPN SILICON TRANSISTOR
Description The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applica.
Features =30V, TC=125°C 10 IEBO VEB=5.0V 100 BVCEO IC=30mA (BD135) 45 BVCEO IC=30mA (BD137) 60 BVCEO IC=30mA (BD139) 80 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(ON) VCE=2.0V, IC=500mA 1.0 hFE VCE=2.0V, IC=5.0mA 40 hFE VCE=2.0V, IC=150mA 63 250 .

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BD137

Fairchild Semiconductor
BD137
Part Number BD137
Manufacturer Fairchild Semiconductor
Title NPN Epitaxial Silicon Transistor
Description BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD.
Features
• Complement to BD136, BD138 and BD140 respectively Applications
• Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Ma.

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BD137

ON Semiconductor
BD137
Part Number BD137
Manufacturer ON Semiconductor
Title NPN Epitaxial Silicon Transistor
Description BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 an.
Features
• Complement to BD136, BD138 and BD140 respectively Applications
• Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Ma.

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