Part Number | BCX55 |
Distributor | Stock | Price | Buy |
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Part Number | BCX55 |
Manufacturer | Central Semiconductor Corp |
Title | SURFACE MOUNT NPN SILICON TRANSISTOR |
Description | The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. SOT-89 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage . |
Features | BVCEO IC=10mA (BCX55) 60 BVCEO IC=10mA (BCX56) 80 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=2.0V, IB=500mA hFE VCE=2.0V, IC=5.0mA 63 hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) 63 hFE VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) 100 hFE VCE=2.0V, IC=500mA 40 fT VCE=5.0V, IC=10mA, f=100MHz 130 MAX 100 10 100 0.5 1.0 250 160 250 UNITS nA µA nA V V V V V V V . |
Part Number | BCX55 |
Manufacturer | Infineon Technologies AG |
Title | NPN Silicon AF Transistors |
Description | NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collctor-emitter saturation voltage • Complementary types: BCX51...BCX53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCX54 ...- BCX56... 1 2 3 2 Type BCX54-16 BCX55 BCX55-16 BC. |
Features | point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit - V A mA W °C Unit K/W 2 2011-09-19 BCX54 ...- BCX56... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCX54 IC = 10 mA, IB = 0 ,. |
Part Number | BCX55 |
Manufacturer | nexperia |
Title | 1A NPN medium power transistors |
Description | NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package Nexperia BCP55 SOT223 BCX55 SOT89 BC55PA SOT1061 JEITA SC-73 SC-62 - [1] Valid for all available selection groups. JEDEC TO-243 - PNP complement BCP52 B. |
Features | and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators Low-side switches Battery-driven devices Power management MOS. |
Part Number | BCX55 |
Manufacturer | Bruckewell |
Title | NPN Silicon AF Transistors |
Description | NPN Silicon AF Transistors FEATURES z For AF driver and output stages z High collector current z Low collector-emitter saturation voltage Pb Lead-free z Complementary types:BCX51…BCX53(PNP) BCX54/BCX55/BCX56 ORDERING INFORMATION Type No. Marking BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-. |
Features | z For AF driver and output stages z High collector current z Low collector-emitter saturation voltage Pb Lead-free z Complementary types:BCX51…BCX53(PNP) BCX54/BCX55/BCX56 ORDERING INFORMATION Type No. Marking BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 BA BC BD BE BG BM BH BK BL SOT-89 Package Code SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-8. |
Part Number | BCX55 |
Manufacturer | Motorola |
Title | Transistor |
Description | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Symbol vCEO VCER vCBO VEBO IB "C BCX54 45 45 45 5.0 0.1 1.0 BCX55 60 60 60 5.0 0.1 1.0 BCX56 80 100 100 5.0 0.1 1.0 Unit V V V V A A . |
Features | . |
Part Number | BCX55 |
Manufacturer | Kexin |
Title | NPN Medium Power Transistors |
Description | SMD Type Transistors NPN Medium Power Transistors BCX54,BCX55,BCX56 Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BCX54 BCX55 BCX56 Collector-emitter voltage BCX54 BCX55 BCX56 Emitter-base voltage Collector . |
Features | High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BCX54 BCX55 BCX56 Collector-emitter voltage BCX54 BCX55 BCX56 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junc. |
Part Number | BCX55 |
Manufacturer | SeCoS |
Title | NPN Transistors |
Description | Elektronische Bauelemente BCX55 NPN Transistors Plastic-Encapsulate Transistors RoHS Compliant Product Features 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER SOT-89 4.4~4.6 1.4~1.8 1.4~1.6 2.3~2.6 3.94~4.25 Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 0.5 1 60 W (Tam. |
Features | 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER SOT-89 4.4~4.6 1.4~1.8 1.4~1.6 2.3~2.6 3.94~4.25 Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 0.5 1 60 W (Tamb=25oC) A V Operating and storage junction temperature range TJ, Tstg: -55 oCto +150oC 0.9~1.1 0.36~0.56 1.5Ref. 2.9~3.1 0.32~0.52 0.35~0.44 Dimensision in Millimeter ELECTRICAL CHARACTERISTICS (Tamb=25 oC . |
Part Number | BCX55 |
Manufacturer | GME |
Title | NPN Silicon AF Transistors |
Description | NPN Silicon AF Transistors FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Pb Lead-free Complementary types: BCX51…BCX53(PNP) Production specification BCX54/BCX55/BCX56 ORDERING INFORMATION Type No. Marking SOT-89 Package Code. |
Features |
For AF driver and output stages High collector current Low collector-emitter saturation voltage Pb Lead-free Complementary types: BCX51…BCX53(PNP) Production specification BCX54/BCX55/BCX56 ORDERING INFORMATION Type No. Marking SOT-89 Package Code BCX54 BCX54-10 BCX54-16 BCX55 BA BC BD BE BCX55-10 BCX55-16 BCX56 BCX56-10 BG BM BH BK BCX56-16 BL MAXIMUM RATING @ Ta=25℃ unless. |
Part Number | BCX55 |
Manufacturer | Diodes |
Title | NPN Medium Power Transistor |
Description | BCX54 / 55 / 56 NPN MEDIUM POWER TRANSISTORS IN SOT89 Features • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51,. |
Features |
• BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring sp. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BCX50 |
Motorola |
HIGH CURRENT TRANSISTORS | |
2 | BCX51 |
Multicomp |
PNP Medium Power Transistor | |
3 | BCX51 |
Bruckewell |
PNP Silicon AF Transistors | |
4 | BCX51 |
NXP |
PNP medium power transistors | |
5 | BCX51 |
Central Semiconductor Corp |
SURFACE MOUNT PNP SILICON TRANSISTOR | |
6 | BCX51 |
Infineon Technologies AG |
PNP Silicon AF Transistors | |
7 | BCX51 |
nexperia |
1A PNP medium power transistors | |
8 | BCX51 |
GME |
PNP Medium power transistors | |
9 | BCX51 |
Motorola |
Transistor | |
10 | BCX51 |
WEJ |
PNP TRANSISTOR |