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| Part Number | BCX41 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BCX41 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
| Description | BCX 41 BSS 64 NPN Silicon AF and Switching Transistor High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BCX 42, BSS 63 (PNP) q BCX 41 BSS 64 Type BCX 41 BSS 64 Marking EKs AMs Ordering Code (tape and reel) Q62702-C1659 Q62702-S535 Pin Configuration 1 2 3 B. |
| Features | rical Characteristics at TA = 25 ˚C, unless otherwise specified. Values Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 80 V VCB = 100 V VCB = 80 V, TA = 150 ˚C VCB = 100 V, TA = 150 ˚C Collector cutoff current VCE = 100 V TA = 85 ˚C TA = 1. |
| Part Number | BCX41 |
| Manufacturer | Infineon |
| Title | NPN Silicon AF and Switching Transistor |
| Description | NPN Silicon AF and Switching Transistor • For general AF applications • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: BCX42 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCX41 32 1 Type BCX41 Marking EKs Pin Configuration 1=B . |
| Features | ter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 125 - - IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 125 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO VCB = 100 V, IE = 0 - - 0.1 VCB = 100 V, IE = 0 , TA = 150 °C - - 20 Collector-emi. |
| Part Number | BCX41 |
| Manufacturer | CDIL |
| Title | NPN Transistor |
| Description | SYMBOL Collector Emitter Voltage VCES Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Peak Pulse Current ICM Continuous Collector Current IC Base Current IB Power Dissipation Ptot Operating and Storage Temperature Range Tj,Tstg 2 VALUE 125 125 5.0 1.0 800 100 330 - 55 to . |
| Features | 5ºC VEB=4V, IC=0 IC=300mA, IB=30mA Base Emitter Saturation Voltage DC Current Gain *VBE (sat) hFE IC=300mA, IB=30mA IC=100µA, VCE=1V *IC=100mA, VCE=1V Transition Frequency Output Capacitance *Pulse width=300µs, duty cycle=2% fT CobO *IC=200mA, VCE=1V IC=10mA, VCE=5V, f=20 MHz VCB=10V, IE=0, f=1MHz MIN TYP 25 63 40 100 12 MAX 100 10 10 75 100 0.9 1.4 BCX41 Rev 240310E UNIT nA µA µA µA nA . |
| Part Number | BCX41 |
| Manufacturer | Kexin |
| Title | Transistor |
| Description | SMD Type Transistors Medium Power Transistor BCX41 Features SOT23 NPN silicon planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage. |
| Features | SOT23 NPN silicon planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation Operating and storage temperature ra. |
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