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| Part Number | BCX20 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BCX20 |
| Manufacturer | Diotec Semiconductor |
| Title | Surface mount Si-Epitaxial PlanarTransistors |
| Description | BCX 19, BCX 20 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 . |
| Features |
500 mA 1A 200 mA 150/C - 65…+ 150/C BCX 20 25 V 30 V
Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V IC = 500 mA, IB = 50 mA IEB0 VCEsat – – ICB0 ICB0 – – Kennwerte (Tj = 25/C) Typ. – – – – Max. 100 nA 5 :A 100 nA 620 mV Collector saturation vol. |
| Part Number | BCX20 |
| Manufacturer | CDIL |
| Title | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1 BCX20 = U2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATING. |
| Features |
current (peak value) Emitter current (peak value) Base current (d.c.) Base current (peak value) Total power dissipation up to Tamb = 25 °C* Storage temperature Junction temperature
VCES VCE0 VEB0 IC ICM –IEM lB IBM Ptot Tstg Tj BCX19 max. 50 BCX20 30 V max. max. max. max. max. max. max. max. max. 45 25 V 5 5V 500 mA 1000 mA 1000 100 mA 200 mA 250 mW –55 to +150 ° C 150 ° C THERMAL. |
| Part Number | BCX20 |
| Manufacturer | Motorola |
| Title | Transistor |
| Description | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO 'C Value BCX19 BCX20 45 25 50 30 5.0 500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device ADissipation, T = 25°C Der. |
| Features | . |
| Part Number | BCX20 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor Switching and Amplifier Applications |
| Description | BCX20 NPN Epitaxial Silicon Transistor January 2005 BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications 3 2 1 SOT-23 Marking: U2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCES VCEO VEBO IC PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Vol. |
| Features | = 1V, IC = 500mA IC = 500mA, IB = 50mA VCE = 1A, IB = 500mA Min. 25 30 5 Max Units V V V 100 10 100 70 40 600 nA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.62 1.2 V V ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BCX20 Rev. A BCX20 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-23 Dimensions in Millimeters 2 BCX20 Rev. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCX20LT1 |
Motorola Inc |
General Purpose Transistors |
|
| 2 | BCX20LT1 |
Leshan Radio Company |
General Purpose Transistors |
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| 3 | BCX20LT1 |
WEJ |
NPN TRANSISTOR |
|
| 4 | BCX22 |
Siemens Semiconductor Group |
NPN SILICON AF TRANSISTORS |
|
| 5 | BCX23 |
Siemens Semiconductor Group |
PNP SILICON AF TRANSISTORS |
|
| 6 | BCX24 |
Siemens Semiconductor Group |
NPN SILICON AF TRANSISTORS |
|
| 7 | BCX25 |
Motorola |
HIGH VOLTAGE TRANSISTORS |
|
| 8 | BCX26 |
Motorola |
HIGH VOLTAGE TRANSISTORS |
|
| 9 | BCX27 |
Motorola |
HIGH VOLTAGE TRANSISTORS |
|
| 10 | BCX28 |
Motorola |
HIGH VOLTAGE TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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