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| Part Number | BCW65B |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BCW65B |
| Manufacturer | CDIL |
| Title | GENERAL PURPOSE TRANSISTOR |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = B. |
| Features | . |
| Part Number | BCW65B |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon AF Transistors |
| Description | NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 67, BCW 68 (PNP) q Type BCW 65 A BCW 65 B BCW 65 C BCW 66 F BCW 66 G BCW 66 H Marking EAs EBs ECs EFs EGs EHs Ordering Code (tape and re. |
| Features | t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 65 BCW 66 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 Collector-base breakdown voltage IC = 10 µA BCW 65 BCW 66 Emitter-base breakdown voltage. |
| Part Number | BCW65B |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon AF Transistor |
| Description | BCW65, BCW66 NPN Silicon AF Transistor For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 (PNP) 3 2 1 VPS05161 Type BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H Maximum Ratings Parameter Marking EAs EBs ECs EFs EGs EHs 1=. |
| Features | at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °. |
| Part Number | BCW65B |
| Manufacturer | Diotec Semiconductor |
| Title | Surface mount Si-Epitaxial PlanarTransistors |
| Description | BCW 65, BCW 66 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 . |
| Features |
= 25/C) BCW 65 32 V 60 V 5V 250 mW 1) 800 mA 1000 mA 100 mA 200 mA 150/C - 65…+ 150/C BCW 66 45 V 75 V
Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB = 45 V IE = 0, VCB = 45 V, Tj = 150/C IC = 0, VEB = 4 V BCW 65 BCW 66 ICB0 ICB0 ICB0 ICB0 IEB0 – – – – – Kennwerte (Tj = 25/C) Typ. – – – – – Max. 20. |
| Part Number | BCW65B |
| Manufacturer | Central Semiconductor |
| Title | SILICON NPN TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-. |
| Features | , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=500mA, IB=50mA fT VCE=5.0V, IC=50mA, f=20MHz 170 Cc VCB=10V, IE=0, f=1.0MHz 8.0 Ce VEB=0.5V, IC=0, f=1.0MHz 50 MAX 20 20 20 0.3 0.7 1. |
| Part Number | BCW65B |
| Manufacturer | Galaxy Electrical |
| Title | NPN General Purpose Amplifier |
| Description | BL Galaxy Electrical NPN General Purpose Amplifier FEATURES z For general AF appilications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Complementary types:BCW67,BCW68(PNP) APPLICATIONS z General purpose medium power amplifier. z Switching appilication. Pro. |
| Features | z For general AF appilications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Complementary types:BCW67,BCW68(PNP) APPLICATIONS z General purpose medium power amplifier. z Switching appilication. Production specification BCW65/66 SOT-23 ORDERING INFORMATION Type No. Marking BCW65A/B/C BCW66F/G/H EA/EB/EC EA/EB/EC Package Code SOT-23 SOT-23 MAXIMUM RATI. |
| Part Number | BCW65B |
| Manufacturer | Multicomp |
| Title | NPN General Purpose Amplifier |
| Description | Features: tFor general AF appilications tHigh current gain tLow collector-emitter saturation voltage tComplementary types:BCW67,BCW68(PNP) Applications: t tSwitching application BCW65/BCW66 Ordering Information Type No. BCW65A/B/C BCW66F/G/H Marking: EA/EB/EC EF/EG/EH Maximum Ratings & Cha. |
| Features | tFor general AF appilications tHigh current gain tLow collector-emitter saturation voltage tComplementary types:BCW67,BCW68(PNP) Applications: t tSwitching application BCW65/BCW66 Ordering Information Type No. BCW65A/B/C BCW66F/G/H Marking: EA/EB/EC EF/EG/EH Maximum Ratings & Characteristics: Tamb=25o Parameter: Collector - Base Voltage - BCW65 - BCW66 Collector - Emitter Voltage - . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCW65 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors |
|
| 2 | BCW65 |
Infineon Technologies AG |
NPN Silicon AF Transistor |
|
| 3 | BCW65 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
|
| 4 | BCW65 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|
| 5 | BCW65 |
Galaxy Electrical |
NPN General Purpose Amplifier |
|
| 6 | BCW65 |
Kexin |
NPN General Purpose Transistors |
|
| 7 | BCW65 |
Multicomp |
NPN General Purpose Amplifier |
|
| 8 | BCW65A |
Siemens Semiconductor Group |
NPN Silicon AF Transistors |
|
| 9 | BCW65A |
Infineon Technologies AG |
NPN Silicon AF Transistor |
|
| 10 | BCW65A |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
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Desde 2024. D4U Semiconductor.
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