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| Part Number | BCP53 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BCP53 |
| Manufacturer | Diodes |
| Title | PNP MEDIUM POWER TRANSISTORS |
| Description | Features BVCEO > -45V, -60V & -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < -500mV @ -0.5A Gain Groups 10 and 16 Complementary NPN Types: BCP54, 55 and 56 Totally Lead-Free & Fully RoHS Compliant (N. |
| Features |
BVCEO > -45V, -60V & -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < -500mV @ -0.5A Gain Groups 10 and 16 Complementary NPN Types: BCP54, 55 and 56 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High R. |
| Part Number | BCP53 |
| Manufacturer | nexperia |
| Title | 1A PNP medium power transistors |
| Description | PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package Nexperia BCP53 SOT223 BCX53 SOT89 BC53PA SOT1061 JEITA SC-73 SC-62 - [1] Valid for all available selection groups. JEDEC TO-243 - NPN complement BCP56 B. |
| Features | and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOS. |
| Part Number | BCP53 |
| Manufacturer | STMicroelectronics |
| Title | MEDIUM POWER AMPLIFIER |
| Description | BCP52/53 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN COMPLEMENTS. |
| Features |
tance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8
o o
C/W C/W
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -30 V V CB = -30 V I C = -100 µ A for BCP52 . |
| Part Number | BCP53 |
| Manufacturer | NXP |
| Title | PNP medium power transistors |
| Description | PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP BCP53 SOT223 BCX53 SOT89 BC53PA SOT1061 JEITA SC-73 SC-62 - [1] Valid for all available selection groups. JEDEC TO-243 - NPN complement BCP56 BCX56 . |
| Features | and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOS. |
| Part Number | BCP53 |
| Manufacturer | Diotec Semiconductor |
| Title | Surface mount Si-Epitaxial PlanarTransistors |
| Description | BCP 51, BCP 52, BCP 53 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 1.65 4 ±0.2 ±0.3 6.5 ±0.1 3 ±0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehäuse 3.5 Weigh. |
| Features |
(TA = 25/C) BCP 52 60 V 60 V 5V 1.3 W 1) 1A 1.5 A 200 mA 150/C - 65…+ 150/C BCP 53 80 V 100 V
Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 30 V IE = 0, - VCB = 30 V, Tj = 125/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IC = 500 mA, - IB = 50 mA - IEB0 - VCEsat – – - ICB0 - ICB0 – – Kennwerte (Tj = 25/C) Typ. – – – . |
| Part Number | BCP53 |
| Manufacturer | ON Semiconductor |
| Title | PNP Silicon Epitaxial Transistors |
| Description | BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223. |
| Features | 100 −5.0 1.5 1.5 12 Vdc Vdc Vdc Adc W mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.5. |
| Part Number | BCP53 |
| Manufacturer | SeCoS |
| Title | PNP Transistor |
| Description | Elektronische Bauelemente BCP53 -1A , -100V PNP Plastic Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage CLASSIFICATION OF hFE Product-Rank . |
| Features |
For AF driver and output stages High collector current Low collector-emitter saturation voltage CLASSIFICATION OF hFE Product-Rank BCP53-16 Range 100~250 PACKAGE INFORMATION Package MPQ SOT-223 1K Leader Size 7 inch SOT-223 A M Top View C B KL E 1 2 3 D F GH 4 J Collector Base REF. A B C D E F Millimeter Min. Max. 5.90 6.70 6.70 7.30 3.30 3.80 1.42 1.90 4.45 4.75 . |
| Part Number | BCP53 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP General Purpose Amplifier |
| Description | This device is designed for general-purpose mediumpower amplifiers and switching circuits for collector currents to 1.0 A. Sourced from process 79. 4 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number BCP53 Marking BCP53 Package SOT-223 4L Packing Method Tape and R. |
| Features | tage Collector Current - Continuous Operating and Storage Junction Temperature Range -80 -100 -5 -1.2 -55 to +150 V V V A °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operation. © 1997 Fairchild Semiconductor Corporation BCP53 Rev.. |
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|---|---|---|---|---|
| 1 | BCP51 |
NXP |
PNP medium power transistors |
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| 2 | BCP51 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
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| 3 | BCP51 |
nexperia |
1A PNP medium power transistors |
|
| 4 | BCP51 |
Fairchild Semiconductor |
PNP General Purpose Amplifier |
|
| 5 | BCP51 |
Diodes |
PNP MEDIUM POWER TRANSISTORS |
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| 6 | BCP51-10 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
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| 7 | BCP51-10T |
nexperia |
1A PNP medium power transistors |
|
| 8 | BCP51-16 |
NXP |
PNP medium power transistors |
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| 9 | BCP51-16 |
Infineon Technologies AG |
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| 10 | BCP51-16T |
nexperia |
1A PNP medium power transistors |
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Desde 2024. D4U Semiconductor.
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