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| Part Number | BCP52 |
| Distributor | Stock | Price | Buy |
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| Part Number | BCP52 |
| Manufacturer | Diodes |
| Title | PNP MEDIUM POWER TRANSISTORS |
| Description | Features BVCEO > -45V, -60V & -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < -500mV @ -0.5A Gain Groups 10 and 16 Complementary NPN Types: BCP54, 55 and 56 Totally Lead-Free & Fully RoHS Compliant (N. |
| Features |
BVCEO > -45V, -60V & -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < -500mV @ -0.5A Gain Groups 10 and 16 Complementary NPN Types: BCP54, 55 and 56 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High R. |
| Part Number | BCP52 |
| Manufacturer | nexperia |
| Title | 1A PNP medium power transistors |
| Description | PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package Nexperia BCP52 SOT223 BCX52 SOT89 BC52PA SOT1061 JEITA SC-73 SC-62 - [1] Valid for all available selection groups. JEDEC TO-243 - NPN complement BCP55 B. |
| Features | and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOS. |
| Part Number | BCP52 |
| Manufacturer | NXP Semiconductors |
| Title | 60V 1A PNP medium power transistors |
| Description | PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview NXP Type number[1] BCP52 BCX52 BC52PA [1] Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipa. |
| Features | and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified PD F w C 1.3 Applications Table 2. Symbol VCEO IC ICM Linear voltage regulators High-side switches Ba. |
| Part Number | BCP52 |
| Manufacturer | STMicroelectronics |
| Title | MEDIUM POWER AMPLIFIER |
| Description | www.DataSheet4U.com BCP52/53 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT . |
| Features |
j-tab • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -30 V V CB = -30 V I C . |
| Part Number | BCP52 |
| Manufacturer | NXP |
| Title | PNP medium power transistors |
| Description | PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP BCP52 SOT223 BCX52 SOT89 BC52PA SOT1061 JEITA SC-73 SC-62 - [1] Valid for all available selection groups. JEDEC TO-243 - NPN complement BCP55 BCX55 . |
| Features | and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOS. |
| Part Number | BCP52 |
| Manufacturer | Infineon Technologies AG |
| Title | PNP Silicon AF Transistors |
| Description | PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCP51...-BCP53... Type BCP51 BCP51-16 BCP52-16 BCP53-10 BC. |
| Features | ermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP51...-BCP53... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitt. |
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| 1 | BCP51 |
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| 2 | BCP51 |
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PNP Silicon AF Transistors |
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| 3 | BCP51 |
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| 4 | BCP51 |
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| 5 | BCP51 |
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| 6 | BCP51-10 |
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| 7 | BCP51-10T |
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| 8 | BCP51-16 |
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| 9 | BCP51-16 |
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| 10 | BCP51-16T |
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Desde 2024. D4U Semiconductor.
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