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BC860B PNP Silicon AF Transistor


BC860B
Part Number BC860B
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LGE
BC860B
Part Number BC860B
Manufacturer LGE
Title Transistor
Description Features Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25.
Features Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak coll.
Kexin
BC860B
Part Number BC860B
Manufacturer Kexin
Title PNP Transistors
Description SMD Type PNP Transistors BC859~BC860 (KC859~KC860) Transistors ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BC849 and BC850. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.
Features
● Low current (max. 100 mA)
● Low voltage (max. 45 V).
● NPN complements: BC849 and BC850. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1
■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage BC859 BC860 Collector - Emit.
BLUE ROCKET ELECTRONICS
BC860B
Part Number BC860B
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon PNP transistor
Description SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features , VCE(sat)。 High current gain, Low collector-emitter saturation voltage. / Applications  General power amplifier application.  / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hF.
Features , VCE(sat)。 High current gain, Low collector-emitter saturation voltage. / Applications  General power amplifier application.  / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 125~250 B 220~475 Marking H4E H4F C 420-800 H4G http://www.fsbrec.com 1/6 BC860 Rev.E Mar.-2016 / Abso.
Siemens Semiconductor Group
BC860B
Part Number BC860B
Manufacturer Siemens Semiconductor Group
Title PNP Silicon AF Transistors
Description PNP Silicon AF Transistors BC 856 ... BC 860 Features q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 85.
Features q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering .
Diotec Semiconductor
BC860B
Part Number BC860B
Manufacturer Diotec Semiconductor
Title SMD General Purpose PNP Transistors
Description BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2015-05-12 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 2.4 ±0.2 1.3±0.1 1.1+0.1 -0.2 Power dissipation – Verlustleistung Plastic case K.
Features - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 65 V 45 V 30 V 80 V 50 V 30 V 5V 250 mW 1) 100 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain
  – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA Group A Group B Group C HFE hFE hFE - VCE = 5 V, - IC = 2 mA Group A Group B Group C HFE hFE hFE.

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