| Part Number | BC857B |
| Manufacturer | Multicomp |
| Title | Bipolar Transistors - BJT PNP 45V 1MA |
| Description | PNP Transistor General Purpose SOT-23 Features: • Low current (maximum100 mA) • Low voltage (maximum 65 V) Applications: • General purpose switching and amplification Maximum Ratings and Characteristics : Tamb = 25°C unless otherwise specified Parameter Symbol Value Collector - Base Voltage -... |
| Features |
• Low current (maximum100 mA) • Low voltage (maximum 65 V) Applications: • General purpose switching and amplification Maximum Ratings and Characteristics : Tamb = 25°C unless otherwise specified Parameter Symbol Value Collector - Base Voltage - BC856 - BC857 - BC858 VCBO -80 -50 -30 Collector - Emitter Voltage - BC856 - BC857 - BC858 Emitter - Base Voltage Collector Current - Continuous Collector Dissipation Junction and Storage Temperature VCEO Vebo IC PC Tj, Tstg -65 -45 -30 -5 -0.1 250 -65 to +150 Unit V A mW °C Parameter Collector-Base Breakdown Voltage Collector-Emitter ... |
| Document |
 BC857B datasheet pdf (609.74KB)
|
| Distributor |
Mouser Electronics All other distributors |
| Stock | 7286 In Stock |
| Price | 1 units: 0.38 USD 10 units: 0.264 USD 100 units: 0.108 USD 1000 units: 0.075 USD 3000 units: 0.06 USD 9000 units: 0.049 USD 24000 units: 0.044 USD 45000 units: 0.041 USD 99000 units: 0.038 USD
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| BuyNow |
 Buy Now (Manufacturer a ROHM Semiconductor BC857BT116) |
| Part Number | BC857B |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | . |
| Features |
. |
| Document | BC857B datasheet pdf |
| Part Number | BC857B |
| Manufacturer | STMicroelectronics |
| Title | SMALL SIGNAL PNP TRANSISTORS |
| Description | ® BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type BC857B Marking 3F s SILICON EPITAXIAL PLANAR PNP TRANSISTOR )s MINIATURE SOT-23 PL. |
| Features |
area of 1 cm2.
Max
500 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector Cut-off Current (IE = 0)
VCB = -30 V VCB = -30 V
TC = 150 oC
-1 -15 nA -5 µA
IEBO Emitter Cut-off Current VEB = -5 V
-10. |
| Document | BC857B datasheet pdf |
| Part Number | BC857B |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP General Purpose Amplifier |
| Description | BC857A / BC857B / BC857C BC857A BC857B BC857C C E SOT-23 Mark: 3E / 3F / 3G B PNP General Purpose Amplifier This device is designed for gener. |
| Features |
e 25°C Thermal Resistance, Junction to Ambient
Max
*BC857A / B / C 350 2.8 357
Units
mW mW/°C °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
ã 1997 Fairchild Semiconductor Corporation
BC857A / BC857B / BC857C
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbo. |
| Document | BC857B datasheet pdf |
| Part Number | BC857B |
| Manufacturer | Central Semiconductor |
| Title | SURFACE MOUNT PNP SILICON TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy mol. |
| Features |
ITIONS
MIN
ICBO ICBO IEBO BVCBO BVCBO BVCBO BVCEO BVCEO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(ON) VBE(ON) fT NF
VCB= 30V VCB= 30V, TA=150°C VEB=5.0V IC=10µA (BC858) IC=10µA (BC857) IC=10µA (BC856) IC=10mA (BC858) IC=10mA (BC857) IC=10mA (BC856) IE=10µA IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA IC=2.0mA, V. |
| Document | BC857B datasheet pdf |
| Part Number | BC857B |
| Manufacturer | WEITRON |
| Title | General Purpose Transistor |
| Description | BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER Maximum Ratings ( TA=25 C unless ot. |
| Features |
aracteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage (IC= -10mA)
BC856 Series BC857 Series
V(BR)CEO
-65 -45
-
-V -
BC858, BC859 Series
-30 - -
Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=. |
| Document | BC857B datasheet pdf |
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